| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Grundmann, Marius
KU Leuven
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (32/32 displayed)
- 2024Ni‐Alloyed Copper Iodide Thin Films: Microstructural Features and Functional Performancecitations
- 2023Realization of Conductive n‐Type Doped <i>α</i>‐Ga<sub>2</sub>O<sub>3</sub> on <i>m</i>‐Plane Sapphire Grown by a Two‐Step Pulsed Laser Deposition Processcitations
- 2023Ultrawide bandgap willemite-type Zn<sub>2</sub>GeO<sub>4</sub> epitaxial thin filmscitations
- 2023Optical properties of Ag<sub><i>x</i></sub>Cu<sub>1–<i>x</i></sub>I alloy thin filmscitations
- 2023Oxygen‐Induced Phase Separation in Sputtered Cu–Sn–I–O Thin Filmscitations
- 2023Defect level in κ-Ga2O3 revealed by thermal admittance spectroscopy ; ENEngelskEnglishDefect level in κ-Ga2O3 revealed by thermal admittance spectroscopycitations
- 2022Band Alignment of Al<sub>2</sub>O<sub>3</sub> on α-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub>citations
- 2022Fermi level controlled point defect balance in ion irradiated indium oxidecitations
- 2022Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys
- 2021Progression of group-III sesquioxides: epitaxy, solubility and desorption
- 2021Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical propertiescitations
- 2020Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structurescitations
- 2020Control of phase formation of (AlxGa1 - X)2O3thin films on c-plane Al2O3
- 2020Controlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition
- 2020Impact of defects on magnetic properties of spinel zinc ferrite thin filmscitations
- 2019Native Point Defect Measurement and Manipulation in ZnO Nanostructurescitations
- 2019Native Point Defect Measurement and Manipulation in ZnO Nanostructures
- 2017Structure and cation distribution of (Mn0.5Zn0.5)Fe2O4 thin films on SrTiO3(001)
- 2016Temperature dependent self-compensation in Al- and Ga-doped Mg0.05 Zn0.95O thin films grown by pulsed laser deposition
- 2016Ellipsometric investigation of ZnFe2O4 thin films in relation to magnetic properties
- 2016Room-temperature domain-epitaxy of copper iodide thin films for transparent CuI/ZnO heterojunctions with high rectification ratios larger than 109citations
- 2015Report / Institute für Physik
- 2015Dielectric function in the spectral range (0.5–8.5)eV of an (Alx Ga1−x )2O3 thin film with continuous composition spread
- 2015Lattice parameters and Raman-active phonon modes of β-(AlxGa1−x)2O3
- 2015Low frequency noise of ZnO based metal-semiconductor field-effect transistors
- 2015Correlation of magnetoelectric coupling in multiferroic BaTiO3-BiFeO3 superlattices with oxygen vacancies and antiphase octahedral rotations
- 2014Schottky contacts to In2O3citations
- 2014Impact of strain on electronic defects in (Mg,Zn)O thin films
- 2014Dielectric function in the NIR-VUV spectral range of (InxGa1-x)2O3 thin films
- 2014Report / Institut für Experimentelle Physik II
- 2014Lattice parameters and Raman-active phonon modes of (InxGa1–x)2O3 for x < 0.4
- 2012Visible emission from ZnCdO/ZnO multiple quantum wellscitations
Places of action
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article
Ultrawide bandgap willemite-type Zn<sub>2</sub>GeO<sub>4</sub> epitaxial thin films
Abstract
<jats:p> Willemite-type Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub> is a promising ultrawide bandgap semiconductor material. To date, experimental results on growth and physical properties of epitaxial thin films of willemite-type Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub> are not available. Here, we report the heteroepitaxial growth of (00.1)-oriented Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub> thin films on c-plane sapphire substrates using pulsed laser deposition. The in-plane orientation relationships are [11.0] Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub>//[11.0] Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and [[Formula: see text]] Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub>//[[Formula: see text]] Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>. A 450 nm thick epitaxial film with a surface roughness of 2.5 nm deposited under 0.1 mbar oxygen partial pressure exhibits a full width at half maximum (FWHM) of rocking curve of (00.6) reflex of 0.35°. The direct bandgap is evaluated to be 4.9 ± 0.1 eV. The valence band maximum is determined to be 3.7 ± 0.1 eV below the Fermi level. Together with the density-functional theory band structure calculation, it is suggested that the O 2p orbital and Zn 3d orbital dominantly contribute to the valence band of Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub>. The steady-state photoluminescence (PL) spectra of the films under 266 nm excitation at room temperature exhibit a broad defect-related emission band centered at 2.62 eV with a FWHM of 0.55 eV. The origin of this native defect-related PL is suggested to correlate with Zn interstitials. This work advances the fundamental study on willemite-type Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub> epitaxial thin films for potential device application. </jats:p>