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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Luo, Sijun
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Publications (3/3 displayed)
- 2023Ultrawide bandgap willemite-type Zn<sub>2</sub>GeO<sub>4</sub> epitaxial thin filmscitations
- 2021Heteroepitaxial Hexagonal (00.1) CuFeO2 Thin Film Grown on Cubic (001) SrTiO3 Substrate Through Translational and Rotational Domain Matchingcitations
- 2020Thickness-dependent microstructural properties of heteroepitaxial (00.1) CuFeO2 thin films on (00.1) sapphire by pulsed laser depositioncitations
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article
Ultrawide bandgap willemite-type Zn<sub>2</sub>GeO<sub>4</sub> epitaxial thin films
Abstract
<jats:p> Willemite-type Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub> is a promising ultrawide bandgap semiconductor material. To date, experimental results on growth and physical properties of epitaxial thin films of willemite-type Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub> are not available. Here, we report the heteroepitaxial growth of (00.1)-oriented Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub> thin films on c-plane sapphire substrates using pulsed laser deposition. The in-plane orientation relationships are [11.0] Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub>//[11.0] Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and [[Formula: see text]] Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub>//[[Formula: see text]] Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>. A 450 nm thick epitaxial film with a surface roughness of 2.5 nm deposited under 0.1 mbar oxygen partial pressure exhibits a full width at half maximum (FWHM) of rocking curve of (00.6) reflex of 0.35°. The direct bandgap is evaluated to be 4.9 ± 0.1 eV. The valence band maximum is determined to be 3.7 ± 0.1 eV below the Fermi level. Together with the density-functional theory band structure calculation, it is suggested that the O 2p orbital and Zn 3d orbital dominantly contribute to the valence band of Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub>. The steady-state photoluminescence (PL) spectra of the films under 266 nm excitation at room temperature exhibit a broad defect-related emission band centered at 2.62 eV with a FWHM of 0.55 eV. The origin of this native defect-related PL is suggested to correlate with Zn interstitials. This work advances the fundamental study on willemite-type Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub> epitaxial thin films for potential device application. </jats:p>