| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kumar, Amit
Queen's University Belfast
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2023Ferrielectricity in the archetypal antiferroelectric, PbZrO3citations
- 2023Unraveling Spatiotemporal Transient Dynamics at the Nanoscale via Wavelet Transform-Based Kelvin Probe Force Microscopycitations
- 2023Ferroelectric domain wall p-n junctionscitations
- 2022Conducting ferroelectric domain walls emulating aspects of neurological behaviorcitations
- 2022Deterministic Dual control of phase competition in Strained BiFeO3 : A Multi-Parametric Structural Lithography Approach
- 2020Direct Processing of PbZr0.53Ti0.47O3 Films on Glass and Polymeric Substratescitations
- 2020Nanodomain Patterns in Ultra-Tetragonal Lead Titanate (PbTiO3)citations
- 2018Revealing the interplay of structural phase transitions and ferroelectric switching in mixed phase BiFeO3citations
- 2018Electromechanical-mnemonic effects in BiFeO3 for electric field history dependent crystallographic phase patterningcitations
- 2017Functional and structural effects of layer periodicity in chemicalsolution-deposited Pb(Zr,Ti)O3thin filmscitations
- 2017Mapping grain boundary heterogeneity at the nanoscale in a positive temperature coefficient of resistivity ceramiccitations
- 2016Local probing of ferroelectric and ferroelastic switching through stress-mediated piezoelectric spectroscopycitations
- 2015Sub-nA spatially resolved conductivity profiling of surface and interface defects in ceria filmscitations
- 2014Spatially-resolved mapping of history-dependent coupled electrochemical and electronical behaviors of electroresistive NiOcitations
- 2014Influence of a Single Grain Boundary on Domain Wall Motion in Ferroelectricscitations
- 2013Nanoscale mapping of oxygen vacancy kinetics in nanocrystalline Samarium doped ceria thin filmscitations
- 2013Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memoriescitations
- 2013Nanometer-scale mapping of irreversible electrochemical nucleation processes on solid Li-ion electrolytescitations
- 2013Nanoscale Probing of Voltage Activated Oxygen Reduction/Evolution Reactions in Nanopatterned (LaxSr1-x)CoO3-delta Cathodescitations
- 2013Giant energy density in [001]-textured Pb(Mg1/3Nb2/3)O-3-PbZrO3-PbTiO3 piezoelectric ceramicscitations
- 2011Measuring oxygen reduction/evolution reactions on the nanoscalecitations
- 2007Adsorption-controlled molecular-beam epitaxial growth of BiFeO3citations
- 2006Multiferroic domain dynamics in strained strontium titanatecitations
Places of action
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article
Conducting ferroelectric domain walls emulating aspects of neurological behavior
Abstract
The electrical conductivity of lithium niobate thin film capacitor structures depends on the density of conducting 180° domain walls, that traverse the interelectrode gap, and on their inclination angle with respect to the polarization axis. Both microstructural characteristics can be altered by applying electric fields, but changes are time-dependent and relax, upon field removal, into a diverse range of remanent states. As a result, the measured conductance is a complex history-dependent function of electric field and time. Here, we show that complexity in the kinetics of microstructural change, in this ferroelectric system, can generate transport behavior that is strongly reminiscent of that seen in key neurological building blocks, such as synapses. Successive voltage pulses, of positive and negative polarity, progressively enhance or suppress domain wall related conductance (analogous to synaptic potentiation and depression), in a way that depends on both the pulse voltage magnitude and frequency. Synaptic spike-rate-dependent plasticity (SRDP) and even Ebbinghaus forgetting behavior, characteristic of learning and memory in the brain, can be emulated as a result. Conductance can also be changed according to the time difference between designed identical voltage pulse waveforms, applied to top and bottom contact electrodes, in a way that can mimic both Hebbian and anti-Hebbian spike-timing-dependent plasticity (STDP) in synapses. While such features have been seen in, and developed for, other kinds of memristors, few have previously been realized through the manipulation of conducting ferroelectric domain walls.