| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Pedersen, Henrik
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (42/42 displayed)
- 2024The Influence of Carbon on Polytype and Growth Stability of Epitaxial Hexagonal Boron Nitride Filmscitations
- 2024On the origin of epitaxial rhombohedral-B4C growth by CVD on 4H-SiC†citations
- 2024Reinforcement of Polyimine Covalent Adaptable Networks with Mechanically Interlocked Derivatives of SWNTs.
- 2024Competitive co-diffusion as a route to enhanced step coverage in chemical vapor depositioncitations
- 2024On the origin of epitaxial rhombohedral-B<sub>4</sub>C growth by CVD on 4H-SiCcitations
- 2024Plasma electron characterization in electron chemical vapor depositioncitations
- 2023Atomic Layer Deposition as the Enabler for the Metastable Semiconductor InN and Its Alloyscitations
- 2023The influence of carbon on polytype and growth stability of epitaxial hexagonal boron nitride films and layerscitations
- 2023Biased quartz crystal microbalance method for studies of chemical vapor deposition surface chemistry induced by plasma electronscitations
- 2023Surface chemical mechanisms of trimethyl aluminum in atomic layer deposition of AlNcitations
- 2023Conformal chemical vapor deposition of boron-rich boron carbide thin films from triethylboroncitations
- 2023Chemical vapor deposition of amorphous boron carbide coatings from mixtures of trimethylboron and triethylboroncitations
- 2022Thermal atomic layer deposition of In2O3 thin films using a homoleptic indium triazenide precursor and watercitations
- 2022Texture evolution in rhombohedral boron carbide films grown on 4H-SiC(0001) and 4H-SiC(0001) substrates by chemical vapor depositioncitations
- 2022Fabrication of semi-transparent SrTaO2N photoanodes with a GaN underlayer grown via atomic layer depositioncitations
- 2022Growth of silicon carbide multilayers with varying preferred growth orientationcitations
- 2022Understanding indium nitride thin film growth under ALD conditions by atomic scale modelling : From the bulk to the In-rich layercitations
- 2022Surface Structures from NH(3) Chemisorption in CVD and ALD of AlN, GaN, and InN Filmscitations
- 2021Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition
- 2021Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Designcitations
- 2021Surface ligand removal in atomic layer deposition of GaN using triethylgalliumcitations
- 2021On the dynamics in chemical vapor deposition of InNcitations
- 2020In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Depositioncitations
- 2020Reduction of Carbon Impurities in Aluminum Nitride from Time-Resolved Chemical Vapor Deposition Using Trimethylaluminumcitations
- 2020Chemical vapor deposition of metallic films using plasma electrons as reducing agentscitations
- 2020Chemical vapor deposition of sp(2)-boron nitride on Si(111) substrates from triethylboron and ammonia: Effect of surface treatmentscitations
- 2019Atomic layer deposition of InN using trimethylindium and ammonia plasmacitations
- 2019Thermodynamic stability of hexagonal and rhombohedral boron nitride under chemical vapor deposition conditions from van der Waals corrected first principles calculationscitations
- 2018Plasma CVD of hydrogenated boron-carbon thin films from triethylboroncitations
- 2017Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Depositioncitations
- 2017Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Depositioncitations
- 2017Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistrycitations
- 2016Trimethylboron as Single-Source Precursor for Boron-Carbon Thin Film Synthesis by Plasma Chemical Vapor Depositioncitations
- 2016Time as the Fourth Dimension: Opening up New Possibilities in Chemical Vapor Depositioncitations
- 2016Trimethylboron as single-source precursor for boron-carbon thin film synthesis by plasma chemical vapor depositioncitations
- 2015Gas phase chemical vapor deposition chemistry of triethylboron probed by boron-carbon thin film deposition and quantum chemical calculationscitations
- 2015Initial stages of growth and the influence of temperature during chemical vapor deposition of sp(2)-BN filmscitations
- 2014Studying chemical vapor deposition processes with theoretical chemistrycitations
- 2013Adsorption and surface diffusion of silicon growth species in silicon carbide chemical vapour deposition processes studied by quantum-chemical computationscitations
- 2012A novel high-power pulse PECVD methodcitations
- 2012On the effect of water and oxygen in chemical vapor deposition of boron nitridecitations
- 2011Epitaxial CVD growthof sp2-hybridized boron nitrideusing aluminum nitride as buffer layercitations
Places of action
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article
Biased quartz crystal microbalance method for studies of chemical vapor deposition surface chemistry induced by plasma electrons
Abstract
A recently presented chemical vapor deposition (CVD) method involves using plasma electrons as reducing agents for deposition of metals. The plasma electrons are attracted to the substrate surface by a positive substrate bias. Here, we present how a standard quartz crystal microbalance (QCM) system can be modified to allow applying a DC bias to the QCM sensor to attract plasma electrons to it and thereby also enable in situ growth monitoring during the electron-assisted CVD method. We show initial results from mass gain evolution over time during deposition of iron films using the biased QCM and how the biased QCM can be used for process development and provide insight into the surface chemistry by time-resolving the CVD method. Post-deposition analyses of the QCM crystals by cross-section electron microscopy and high-resolution x-ray photoelectron spectroscopy show that the QCM crystals are coated by an iron-containing film and thus function as substrates in the CVD process. A comparison of the areal mass density given by the QCM crystal and the areal mass density from elastic recoil detection analysis and Rutherford backscattering spectrometry was done to verify the function of the QCM setup. Time-resolved CVD experiments show that this biased QCM method holds great promise as one of the tools for understanding the surface chemistry of the newly developed CVD method. ; Funding Agencies|Swedish Research Council (VR) [2015-03803, 2019-05055]; Swedish Foundation for Strategic Research [15-0018]; Lam Research Corporation