| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lundin, Daniel
Linköping University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (24/24 displayed)
- 2025Epitaxial growth of TiZrNbTaN films without external heating by high-power impulse magnetron sputteringcitations
- 2024Plasma electron characterization in electron chemical vapor depositioncitations
- 2023On selective ion acceleration in bipolar HiPIMS: A case study of (Al,Cr)2O3 film growthcitations
- 2023Biased quartz crystal microbalance method for studies of chemical vapor deposition surface chemistry induced by plasma electronscitations
- 2023Corundum-structured AlCrNbTi oxide film grown using high-energy early-arriving ion irradiation in high-power impulse magnetron sputteringcitations
- 2023HiPIMS-grown AlN buffer for threading dislocation reduction in DC-magnetron sputtered GaN epifilm on sapphire substratecitations
- 2021Modeling of high power impulse magnetron sputtering discharges with graphite targetcitations
- 2021Low temperature growth of stress-free single phase alpha-W films using HiPIMS with synchronized pulsed substrate biascitations
- 2021Influence of Metal Substitution and Ion Energy on Microstructure Evolution of High-Entropy Nitride (TiZrTaMe)N1-x (Me = Hf, Nb, Mo, or Cr) Filmscitations
- 2020Chemical vapor deposition of metallic films using plasma electrons as reducing agentscitations
- 2020Low resistivity amorphous carbon-based thin films employed as anti-reflective coatings on coppercitations
- 2019Tuning high power impulse magnetron sputtering discharge and substrate bias conditions to reduce the intrinsic stress of TiN thin filmscitations
- 2018Low temperature (T-s/T-m < 0.1) epitaxial growth of HfN/MgO(001) via reactive HiPIMS with metal-ion synchronized substrate biascitations
- 2018Influence of backscattered neutrals on the grain size of magnetron-sputtered TaN thin filmscitations
- 2017Benefits of energetic ion bombardment for tailoring stress and microstructural evolution during growth of Cu thin filmscitations
- 2017Epitaxial growth of Cu(001) thin films onto Si(001) using a single-step HiPIMS processcitations
- 2014Anti-vibration Engineering in Internal Turning Using a Carbon Nanocomposite Damping Coating Produced by PECVD Processcitations
- 2012Influence of ionization degree on film properties when using high power impulse magnetron sputteringcitations
- 2012Influence of ionization degree on film properties when using high power impulse magnetron sputteringcitations
- 2012An introduction to thin film processing using high-power impulse magnetron sputteringcitations
- 2012A novel high-power pulse PECVD methodcitations
- 2012High power impulse magnetron sputtering dischargecitations
- 2010The HiPIMS Process
- 2008Plasma properties in high power impulse magnetron sputtering
Places of action
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article
Biased quartz crystal microbalance method for studies of chemical vapor deposition surface chemistry induced by plasma electrons
Abstract
A recently presented chemical vapor deposition (CVD) method involves using plasma electrons as reducing agents for deposition of metals. The plasma electrons are attracted to the substrate surface by a positive substrate bias. Here, we present how a standard quartz crystal microbalance (QCM) system can be modified to allow applying a DC bias to the QCM sensor to attract plasma electrons to it and thereby also enable in situ growth monitoring during the electron-assisted CVD method. We show initial results from mass gain evolution over time during deposition of iron films using the biased QCM and how the biased QCM can be used for process development and provide insight into the surface chemistry by time-resolving the CVD method. Post-deposition analyses of the QCM crystals by cross-section electron microscopy and high-resolution x-ray photoelectron spectroscopy show that the QCM crystals are coated by an iron-containing film and thus function as substrates in the CVD process. A comparison of the areal mass density given by the QCM crystal and the areal mass density from elastic recoil detection analysis and Rutherford backscattering spectrometry was done to verify the function of the QCM setup. Time-resolved CVD experiments show that this biased QCM method holds great promise as one of the tools for understanding the surface chemistry of the newly developed CVD method. ; Funding Agencies|Swedish Research Council (VR) [2015-03803, 2019-05055]; Swedish Foundation for Strategic Research [15-0018]; Lam Research Corporation