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Nguyen, Trang
KU Leuven
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- 2023Factors impacting HIV testing among young sexually active women migrant workers in Vietnamese industrial zones
- 2022Elimination of remnant phases in low-temperature growth of wurtzite ScAlN by molecular-beam epitaxycitations
- 2020Simultaneous Voltammetric Determination of Uric Acid, Xanthine, and Hypoxanthine Using CoFe2O4/Reduced Graphene Oxide-Modified Electrodecitations
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article
Elimination of remnant phases in low-temperature growth of wurtzite ScAlN by molecular-beam epitaxy
Abstract
<jats:p>Growth of wurtzite ScxAl1−xN (x &lt; 0.23) by plasma-assisted molecular-beam epitaxy on c-plane GaN at high temperatures significantly alters the extracted lattice constants of the material due to defects likely associated with remnant phases. In contrast, ScAlN grown below a composition-dependent threshold temperature exhibits uniform alloy distribution, reduced defect density, and atomic-step surface morphology. The c-plane lattice constant of this low-temperature ScAlN varies with composition as expected from previous theoretical calculations and can be used to reliably estimate alloy composition. Moreover, lattice-matched Sc0.18Al0.82N/GaN multi-quantum wells grown under these conditions display strong and narrow near-infrared intersubband absorption lines that confirm advantageous optical and electronic properties.</jats:p>