| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Bobnar, Vid
Jožef Stefan Institute
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Thermally Stable Capacitive Energy-Density and Colossal Electrocaloric and Pyroelectric Effects of Sm-Doped Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 Thin Filmscitations
- 2023Synergetic boost of functional properties near critical end points in antiferroelectric systemscitations
- 2023Non-stoichiometry and its implications for the properties of PMN–PT thin filmscitations
- 2022The effect of PVP on thermal, mechanical, and dielectric properties in PVDF-HFP/PVP thin filmcitations
- 2022Large imprint in epitaxial 0.67Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-0.33PbTiO<sub>3</sub> thin films for piezoelectric energy harvesting applicationscitations
- 2022The Effect of PVP on Thermal, Mechanical, and Dielectric Properties in PVDF-HFP/PVP Thin Filmcitations
- 2021High dielectric thin films based on UV-reduced graphene oxide and TEMPO-oxidized cellulose nanofibrescitations
- 2018Cellulose nanofibrils-reduced graphene oxide xerogels and cryogels for dielectric and electrochemical storage applicationscitations
- 2017Strontium-doping effects in solution derived lead-free ferroelectric K(0.5)Na(0.5)NbO3 thin films
- 2016Microstructure and functional properties of Sr-doped K0.5Na0.5NbO3 thin films
Places of action
| Organizations | Location | People |
|---|
article
Large imprint in epitaxial 0.67Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-0.33PbTiO<sub>3</sub> thin films for piezoelectric energy harvesting applications
Abstract
<jats:p> Tuning and stabilizing a large imprint in epitaxial relaxor ferroelectric thin films is one of the key factors for designing micro-electromechanical devices with an enhanced figure of merit (FOM). In this work, epitaxial 500 nm-thick 0.67Pb(Mg<jats:sub>1/3</jats:sub>Nb<jats:sub>2/3</jats:sub>)O<jats:sub>3</jats:sub>–0.33PbTiO<jats:sub>3</jats:sub> (PMN–33PT) films, free from secondary phases and with extremely low rocking curves (FWHM < 0.05°), are grown on ScSmO<jats:sub>3</jats:sub> (SSO) and DyScO<jats:sub>3</jats:sub> (DSO) substrates buffered with SrRuO<jats:sub>3</jats:sub> (SRO). The PMN–33PT is observed to grow coherently on SSO substrates (lattice mismatch of −0.7%), which is c-axis oriented and exhibits large tetragonality compared to bulk PMN–33PT, while on DSO substrates (lattice mismatch of −1.9%), the PMN–33PT film is almost completely relaxed and shows reduced tetragonality. Due to the compressive epitaxial strain, the fully strained PMN–33PT film displays typical ferroelectric P–E hysteresis loops, while the relaxed sample shows relaxor-like P–E loops. Samples present large negative imprints of about −88.50 and −49.25 kV/cm for PMN–33PT/SRO/SSO and PMN–33PT/SRO/DSO, respectively, which is more than threefold higher than the coercive field. The imprint is induced by the alignment of defect dipoles with the polarization and is tuned by the epitaxial strain. It permits the stabilization of a robust positive polarization state (P<jats:sub>r</jats:sub> ∼ 20 μC/cm<jats:sup>2</jats:sup>) and low dielectric permittivity (<700). In addition, the relaxed PMN–33PT film shows improved piezoelectric properties, with a 33% enhancement in d<jats:sub>33,eff</jats:sub> relative to the fully strained sample. The obtained low dielectric permittivity and the high piezoelectric coefficients at zero electric field in the studied PMN–33PT films hold great promise to maximize the FOM toward applications in piezoelectric devices. </jats:p>