| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Vennéguès, Philippe
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024High-temperature dust formation in carbon-rich astrophysical environmentscitations
- 2024III-V/Si epitaxial growth and antiphase domains: a matter of symmetry
- 2024Low-Temperature Epitaxy of Fe 3 O 4 Thin Films on ZnO(0001) and Related Interface Studies ; Épitaxie à basse température de films minces de Fe₃O₄ sur ZnO(0001) et études associées de l'interface
- 2022CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growthcitations
- 2022On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientationscitations
- 2022Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BNcitations
- 2021Microstructure of epitaxial Mg3N2 thin films grown by MBEcitations
- 2020Luminescence behavior of semipolar (10-11) InGaN/GaN "bow-tie" structures on patterned Si substratescitations
- 2012On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substratescitations
Places of action
| Organizations | Location | People |
|---|
article
On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations
Abstract
International audience ; In the first part of this paper, we present a model that explains and determines quantitatively the twists between nucleation islands in the case of a Volmer–Weber heteroepitaxial growth of tetrahedrally coordinated semiconductors along hexagonal orientations. These twists are caused by the network of the screw components of the 60° misfit dislocations. The orientations of the screw components are distributed randomly, and the maximum twist is obtained when all the screw components have the same orientation. The maximum twists are related to the density of misfit dislocations and, therefore, increase with the mismatch between the deposited materials and their substrate. In the second part of the paper, we study five systems having a large distribution of mismatches from 4% to 19%. For the four systems fulfilling the conditions necessary for the application of the model (plastic relaxation of grown islands), the measured maximum twists fit with the calculated values, thereby validating the model. The twists of nucleation islands are related to the mismatch and are, therefore, intrinsic to the material systems. The defects created at the coalescence of twisted islands determine the initial microstructure/defect distribution of the nucleation layer.