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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Ghosh, Sambit
University of Gothenburg
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2022Manipulation of Domain Walls in Anti-perovskite Ferrimagnetic Nitrides
- 2022Anisotropic magnetoresistance in Mn 4− x Ni x N and the change in the crystalline fieldcitations
- 2022Manipulation of Domain Walls in Anti-perovskite Ferrimagnetic Nitrides ; Manipulation de parois de domaine dans les nitrures ferrimagnétiques anti-pérovskites
- 2019Large Current Driven Domain Wall Mobility and Gate Tuning of Coercivity in Ferrimagnetic Mn4N Thin Filmscitations
- 2019Large Current Driven Domain Wall Mobility and Gate Tuning of Coercivity in Ferrimagnetic Mn4N Thin Filmscitations
Places of action
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article
Anisotropic magnetoresistance in Mn 4− x Ni x N and the change in the crystalline field
Abstract
We focus on rare-earth-free anti-perovskite Mn 4− x Ni x N epitaxial films, which can be used for ultrafast current-induced domain wall motion (CIDWM) in magnetic strips. The magneto-transport properties of these materials are very important for a deep understanding of CIDWM. In this study, we investigated the magneto-transport properties of Mn 4− x Ni x N epitaxial films grown on SrTiO 3 (001) and MgO(001) substrates through anisotropic magnetoresistance (AMR) measurements at temperatures between 2 and 300 K. In samples with a small Ni composition such as x = 0.05−0.1, the AMR ratio of Mn 4− x Ni x N drastically decreased with increasing temperature. We also analyzed the twofold and fourfold symmetries in the AMR curves. Fourfold symmetry is caused by tetragonal crystal fields and is unique to anti-perovskite 3 d-metal nitrides such as Mn 4 N and Fe 4 N. Only slight fourfold symmetry was observed in Mn 4− x Ni x N. We also performed first-principles calculations with the Vienna ab initio simulation package (VASP) to obtain the projected density of states (PDOS) of d orbitals in Mn 4− x Ni x N, which is responsible for the magnetism of these materials. We conclude that these results are due to the Ni atoms, which function as magnetic impurities and lead to a noticeable change in PDOS, as proved by VASP calculation.