| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Attané, Jean-Philippe
Université Grenoble Alpes
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Ferroelectric spin orbit devices for ultralow power computing
- 2023Electrical characterization of the azimuthal anisotropy of $(mathrm{Ni}_xmathrm{Co}_{1-x})mathrm{B}$-based ferromagnetic nanotubescitations
- 2022Anisotropic magnetoresistance in Mn 4− x Ni x N and the change in the crystalline fieldcitations
- 2021Spin–Charge Interconversion in KTaO 3 2D Electron Gasescitations
- 2021Spin–Charge Interconversion in KTaO3 2D Electron Gasescitations
- 2021Room-temperature ferroelectric switching of spin-to-charge conversion in GeTecitations
- 2020Switchable two-dimensional electron gas based on ferroelectric Ca:SrTiO 3citations
- 2019Magnetic and magneto-transport properties of Mn4N thin films by Ni substitution and their possibility of magnetic compensationcitations
- 2018Calculation method of spin accumulations and spin signals in nanostructures using spin resistorscitations
- 2017Geometrical control of pure spin current induced domain wall depinning
- 2016Spin Hall effect in AuW alloys
- 2013Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bandscitations
- 2013Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bandscitations
- 2010Effect of crystalline defects on domain wall motion under field and current in nanowires with perpendicular magnetization.citations
Places of action
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article
Anisotropic magnetoresistance in Mn 4− x Ni x N and the change in the crystalline field
Abstract
We focus on rare-earth-free anti-perovskite Mn 4− x Ni x N epitaxial films, which can be used for ultrafast current-induced domain wall motion (CIDWM) in magnetic strips. The magneto-transport properties of these materials are very important for a deep understanding of CIDWM. In this study, we investigated the magneto-transport properties of Mn 4− x Ni x N epitaxial films grown on SrTiO 3 (001) and MgO(001) substrates through anisotropic magnetoresistance (AMR) measurements at temperatures between 2 and 300 K. In samples with a small Ni composition such as x = 0.05−0.1, the AMR ratio of Mn 4− x Ni x N drastically decreased with increasing temperature. We also analyzed the twofold and fourfold symmetries in the AMR curves. Fourfold symmetry is caused by tetragonal crystal fields and is unique to anti-perovskite 3 d-metal nitrides such as Mn 4 N and Fe 4 N. Only slight fourfold symmetry was observed in Mn 4− x Ni x N. We also performed first-principles calculations with the Vienna ab initio simulation package (VASP) to obtain the projected density of states (PDOS) of d orbitals in Mn 4− x Ni x N, which is responsible for the magnetism of these materials. We conclude that these results are due to the Ni atoms, which function as magnetic impurities and lead to a noticeable change in PDOS, as proved by VASP calculation.