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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Defay, Emmanuel
Luxembourg Institute of Science and Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2022Birefringence induced by antiferroelectric switching in transparent polycrystalline PbZr0.95Ti0.05O3 filmcitations
- 2022Piezoelectric thick film for power-efficient haptic actuatorcitations
- 2020Fully Transparent Friction‐Modulation Haptic Device Based on Piezoelectric Thin Filmcitations
- 2018Correlation of electrical characteristics with interface chemistry and structure in Pt/Ru/PbZr$_{0.52}$ Ti$_{0.48}$O$_3$/Pt capacitors after post metallization annealingcitations
- 2017Electrical response of Pt/Ru/PbZr 0.52 Ti 0.48 O 3 /Pt capacitor as function of lead precursor excesscitations
- 2011Tunability of aluminum nitride acoustic resonators: a phenomenological approachcitations
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article
Piezoelectric thick film for power-efficient haptic actuator
Abstract
<jats:p> Emerging haptic technology based on piezoelectric actuators enables to realize innovative tactile human–machine interface. The standard solution is based on stand-alone bulk ceramics glued directly on the haptic device. Thin-film actuators with metal–insulator–metal structure have been developed to directly integrate actuators on haptic plates. The thickness of thin films is limited to 2 μm, leading to large capacitance and, thus, too high-power consumption. To solve this issue, we developed haptic devices based on a 10 μm-thick PZT film deposited on a 0.65 mm-thick platinized silicon substrate. These thick films are made of a PZT composite slurry associated with sol-gel sol infiltration. They are dense and exhibit a permittivity of 1000 and dielectric loss lower than 0.05. Our fabricated haptic device containing three actuators connected in series exhibits an antisymmetric Lamb wave resonant mode at 62.0 kHz, in line with finite element modeling. At the limit of touch detection (1 μm out of plane deflection), the power consumption of the haptic device is 150 mW at 40 V. This represents a 15-fold consumption reduction with respect to the same haptic device made with 0.5 μm-thick PZT thin films. </jats:p>