| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Siffalovic, Peter
Centre of Excellence for Advanced Materials Application
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Organic light-emitting diodes comprising an undoped thermally activated delayed fluorescence emissive layer and a thick inorganic perovskite hole transport layer
- 2024Unraveling Bulk versus Surface Passivation Effects in Highly Efficient p–<i>i</i>–n Perovskite Solar Cells Using Thiophene‐Based Cationscitations
- 2024Deciphering the Formation Process of 2D to 3D Halide Perovskite Thin Films
- 2024A dual strategy to enhance the photoelectric performance of Perovskite-Based photodetectors for potential applications in optical communicationscitations
- 2024Pizza oven processing of organohalide perovskites (POPOP): a simple, versatile and efficient vapor deposition methodcitations
- 2024Organic Light-Emitting Diodes Comprising an Undoped Thermally Activated Delayed Fluorescence Emissive Layer and a Thick Inorganic Perovskite Hole Transport Layer
- 2022A wide-angle X-ray scattering laboratory setup for tracking phase changes of thin films in a chemical vapor deposition chambercitations
- 2022Improved Properties of Li-Ion Battery Electrodes Protected By Al2O3 and ZnO Ultrathin Layers Prepared By Atomic Layer Depositioncitations
- 2021Early-stage growth observations of orientation-controlled vacuum-deposited naphthyl end-capped oligothiophenescitations
- 2021Early-stage growth observations of orientation-controlled vacuum-deposited naphthyl end-capped oligothiophenescitations
- 2021Early-stage growth observations of orientation-controlled vacuum-deposited naphthyl end-capped oligothiophenescitations
- 2020Surface-Controlled Crystal Alignment of Naphthyl End-Capped Oligothiophene on Graphene: Thin-Film Growth Studied by In Situ X-ray Diffractioncitations
- 2020Surface-Controlled Crystal Alignment of Naphthyl End-Capped Oligothiophene on Graphene: Thin-Film Growth Studied by in Situ X-ray Diffractioncitations
- 2019Polyethylene glycol-modified poly(styrene-co-ethylene/butylene-co-styrene)/carbon nanotubes composite for humidity sensing
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article
A wide-angle X-ray scattering laboratory setup for tracking phase changes of thin films in a chemical vapor deposition chamber
Abstract
<jats:p> The few-layer transition metal dichalcogenides (TMD) are an attractive class of materials due to their unique and tunable electronic, optical, and chemical properties, controlled by the layer number, crystal orientation, grain size, and morphology. One of the most commonly used methods for synthesizing the few-layer TMD materials is the chemical vapor deposition (CVD) technique. Therefore, it is crucial to develop in situ inspection techniques to observe the growth of the few-layer TMD materials directly in the CVD chamber environment. We demonstrate such an in situ observation on the growth of the vertically aligned few-layer MoS<jats:sub>2</jats:sub> in a one-zone CVD chamber using a laboratory table-top grazing-incidence wide-angle X-ray scattering (GIWAXS) setup. The advantages of using a microfocus X-ray source with focusing Montel optics and a single-photon counting 2D X-ray detector are discussed. Due to the position-sensitive 2D X-ray detector, the orientation of MoS<jats:sub>2</jats:sub> layers can be easily distinguished. The performance of the GIWAXS setup is further improved by suppressing the background scattering using a guarding slit, an appropriately placed beamstop, and He gas in the CVD reactor. The layer growth can be monitored by tracking the width of the MoS<jats:sub>2</jats:sub> diffraction peak in real time. The temporal evolution of the crystallization kinetics can be satisfactorily described by the Avrami model, employing the normalized diffraction peak area. In this way, the activation energy of the particular chemical reaction occurring in the CVD chamber can be determined. </jats:p>