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| Azevedo, Nuno Monteiro |
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Komissinskiy, Philipp
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Publications (9/9 displayed)
- 2024{001}-textured Pb(Zr, Ti)O₃ thin films on stainless steel by pulsed laser deposition
- 2023Operando two-terminal devices inside a transmission electron microscopecitations
- 2023Tailoring Optical Properties in Transparent Highly Conducting Perovskites by Cationic Substitutioncitations
- 2023Role of kinetic energy on Nb3Sn thin films by low-temperature co-sputtering
- 2022Evidence for antipolar displacements in NaNbO3 thin filmscitations
- 2021Modification of energy band alignment and electric properties of Pt/Ba₀.₆Sr₀.₄TiO₃/Pt thin-film ferroelectric varactors by Ag impurities at interfaces
- 2021Optical Plasmon Excitation in Transparent Conducting SrNbO3 and SrVO3 Thin Films
- 2021Charge-transfer driven ferromagnetism in a disordered three-dimensional 3d-5d spin system
- 2020Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switchingcitations
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article
Evidence for antipolar displacements in NaNbO3 thin films
Abstract
<jats:p> An antipolar phase is confirmed for NaNbO<jats:sub>3</jats:sub> thin films grown by pulsed laser deposition on SrTiO<jats:sub>3</jats:sub> (100) substrates. Reciprocal space maps and transmission electron microscopy reveal the presence of characteristic 1/4 superlattice reflections, indicative of the antipolar displacement of Na and Nb-ions. Furthermore, x-ray diffraction unveils the presence of two different orientations of the same phase for thin films beyond a critical thickness of about 60 nm. This orientation change with increasing thickness can be explained as an extraordinary strain compensation mechanism, changing magnitude and sign of the strain at the same time. The polarization vs electric field behavior exposes a characteristic thickness dependence, with the antiferroelectric phase stabilized for very thin films and a field induced ferroelectric hysteresis for a film of 310 nm having a maximum polarization of 26.5 μC [Formula: see text], which is among the highest values reported for NaNbO<jats:sub>3</jats:sub> thin films grown on SrTiO<jats:sub>3</jats:sub> (100). </jats:p>