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Naji, M. |
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Motta, Antonella |
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Mohamed, Tarek |
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Landes, Michael |
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Ding, Hui
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Publications (6/6 displayed)
- 2025Hierarchy of defects in near-Σ5 tilt grain boundaries in copper studied by length-scale bridging electron microscopy
- 2022Evidence for antipolar displacements in NaNbO3 thin filmscitations
- 2021Domain morphology of newly designed lead-free antiferroelectric NaNbO3-SrSnO3 ceramicscitations
- 2021Influence of Defects on the Schottky Barrier Height at BaTiO3/RuO2 Interfacescitations
- 2020Electric-field-induced antiferroelectric to ferroelectric phase transition in polycrystalline NaNbO3citations
- 2020Direct 3D Printing of Graphene Using Capillary Suspensionscitations
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article
Evidence for antipolar displacements in NaNbO3 thin films
Abstract
<jats:p> An antipolar phase is confirmed for NaNbO<jats:sub>3</jats:sub> thin films grown by pulsed laser deposition on SrTiO<jats:sub>3</jats:sub> (100) substrates. Reciprocal space maps and transmission electron microscopy reveal the presence of characteristic 1/4 superlattice reflections, indicative of the antipolar displacement of Na and Nb-ions. Furthermore, x-ray diffraction unveils the presence of two different orientations of the same phase for thin films beyond a critical thickness of about 60 nm. This orientation change with increasing thickness can be explained as an extraordinary strain compensation mechanism, changing magnitude and sign of the strain at the same time. The polarization vs electric field behavior exposes a characteristic thickness dependence, with the antiferroelectric phase stabilized for very thin films and a field induced ferroelectric hysteresis for a film of 310 nm having a maximum polarization of 26.5 μC [Formula: see text], which is among the highest values reported for NaNbO<jats:sub>3</jats:sub> thin films grown on SrTiO<jats:sub>3</jats:sub> (100). </jats:p>