• Spohn, Tobias
• Dunham, Scott T.
• Senkalla, Katharina
• Xia, Xiaojing
• Gupta, Chaman
• Jelezko, Fedor
• Pant, Anupum
• Felsted, Greg

Abstract

<jats:p> Solid-state laser refrigeration of semiconductors remains an outstanding experimental challenge. In this work, we show that, following excitation with a laser wavelength of 532 nm, bulk diamond crystals doped with H3 centers both emit efficient up-conversion (anti-Stokes) photoluminescence and also show significantly reduced photothermal heating relative to crystals doped with nitrogen–vacancy (NV) centers. The H3 center in diamond is a highly photostable defect that avoids bleaching at high laser irradiances of 10–70 MW/cm[Formula: see text] and has been shown to exhibit laser action, tunable over the visible band of 500–600 nm. The observed reduction of photothermal heating arises due to a decrease in the concentration of absorbing point defects, including NV-centers. These results encourage future exploration of techniques for H3 enrichment in diamonds under high-pressure, high-temperature conditions for the simultaneous anti-Stokes fluorescence cooling and radiation balanced lasing in semiconductor materials. Reducing photothermal heating in diamond through the formation of H3 centers also opens up new possibilities in quantum sensing via optically detected magnetic resonance spectroscopy at ambient conditions. </jats:p>

Topics

• impedance spectroscopy
• photoluminescence
• semiconductor
• Nitrogen
• vacancy
• point defect