| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Baron, Thierry
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024Study of In0,53Ga0,47As/ InP/InAlAs/InP heterostructures by TOF-SIMS and HAXPES
- 2022Impact of Substrate Biasing During AlN Growth by PEALD on Al 2 O 3 /AlN/GaN MOS Capacitorscitations
- 2022Impact of Substrate Biasing During AlN Growth by PEALD on Al 2 O 3 /AlN/GaN MOS Capacitorscitations
- 2022200 mm-scale growth of 2D layered GaSe with preferential orientationcitations
- 2021Gallium Selenide Nanoribbons on Silicon Substrates for Photodetectioncitations
- 2020Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasingcitations
- 2018Electrical properties of metal/Al 2 O 3 /In 0.53 Ga 0.47 As capacitors grown on InPcitations
- 2018Low temperature growth and physical properties of InAs thin films grown on Si, GaAs and In 0.53 Ga 0.47 As templatecitations
- 2018Comprehension of peculiar local emission behavior of InGaAs quantum well by colocalized nanocharacterization combining cathodoluminescence and electron microscopy techniquescitations
- 2016Toward the III-V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001)citations
- 2014Hybrid nanocomposites based on conducting polymer and silicon nanowires for photovoltaic applicationcitations
- 2011Hidden defects in silicon nanowirescitations
- 2009Self-assembling study of a cylinder-forming block copolymer via a nucleation-growth mechanismcitations
- 2009Emerging Nanotechnology for integration of Nanostructures in Nanoelectronic devicescitations
- 2008Control of gold surface diffusion on Si nanowirescitations
- 2007MOCVD of BiFeO3 thin films on SrTiO3citations
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article
200 mm-scale growth of 2D layered GaSe with preferential orientation
Abstract
International audience ; In this article, we present a fab-compatible metal–organic chemical vapor deposition growth process, realized in a hydrogen ambience, of two-dimensional (2D) layered GaSe on 200 mm diameter Si(111) wafers. Atomic scale characterization reveals initial stages of growth consisting of passivation of the H–Si (111) surface by a half-monolayer of GaSe, followed by nucleation of 2D-GaSe from the screw dislocations located at the step edges of the substrate. We, thus, demonstrate that by using a Si wafer that is slightly misoriented toward [Formula: see text], the crystallographic orientation of 2D-GaSe can be step-edge-guided. It results in a coalesced layer that is nearly free from antiphase boundaries. In addition, we propose a sequential process to reduce the density of screw dislocations. This process consists in a subsequent regrowth after partial sublimation of the initially grown GaSe film. The local band bending in GaSe near the antiphase boundaries measured by Kelvin probe force microscopy emphasizes the electrical activity of these defects and the usefulness of having a nearly single-orientation film. Such a low defectivity layer opens up the way toward large-scale integration of 2D-optical transceivers in Si CMOS technology.