• Vincent, Grégory
• Izquierdo, Eva
• Pierini, Stefano
• Chu, Audrey
• Xu, Xiang Zhen
• Lhuillier, Emmanuel
• Desplanque, L.
• Abadie, Claire
• Prado, Yoann
• Khalili, Adrien
• Ithurria, Sandrine
• Dang, Tung Huu
• Dabard, Corentin
• Gréboval, Charlie
• Zhang, Huichen
• Coinon, Christophe
• Cavallo, Mariarosa

Abstract

For short wave infrared (SWIR) sensing, InGaAs is the leading technology combining high carrier mobility, high homogeneity and complete control over n-top doping. In the meanwhile, numerous alternative materials have tried to compete with InGaAs. Among them, colloidal nanocrystals with narrow band gap can address the current issue in designing cost-effective sensors for the SWIR range. Rather than pitting these two materials against each other, here we design a synergistic duo in which HgTe nanocrystals are used to broaden the spectral range of InGaAs while lifting the lattice matching constraints. We propose a diode geometry where a p-type HgTe NC array is coupled with n-type InGaAs wires which are used as high mobility (µ>1000 cm 2 .V-1 s-1) minority carrier extractors. This approach also demonstrates that Van der Waals heterostructures are not limited to graphene-like materials and that bulk-like III-V semiconductors can also be light sensitized by colloidal nanoparticles. This work paves the way toward further synergies between epitaxially grown and colloidally grown semiconductors for infrared detection.

Topics

• nanoparticle
• impedance spectroscopy
• mobility
• wire
• III-V semiconductor