| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mcquaid, Raymond G. P.
Queen's University Belfast
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Ferroelectric domain wall p-n junctionscitations
- 2023Ferroelectric domain wall p-n junctionscitations
- 2022Conducting ferroelectric domain walls emulating aspects of neurological behaviorcitations
- 2022Deterministic Dual control of phase competition in Strained BiFeO3 : A Multi-Parametric Structural Lithography Approach
- 2021Influence of charged walls and defects on DC resistivity and dielectric relaxations in Cu-Cl boracite
- 2021Influence of charged walls and defects on DC resistivity and dielectric relaxations in Cu-Cl boracite
- 2021Deterministic dual control of phase competition in strained BiFeO3 : a multiparametric structural lithography approach
- 2018Giant Resistive Switching in Mixed Phase BiFeO3 via phase population controlcitations
- 2017Non-equilibrium ferroelectric-ferroelastic 10nm nanodomains: wrinkles, period-doubling and power-law relaxationcitations
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article
Influence of charged walls and defects on DC resistivity and dielectric relaxations in Cu-Cl boracite
Abstract
Charged domain walls form spontaneously in Cu-Cl boracite on cooling through the phase transition. These walls exhibit changed conductivity compared to the bulk and motion consistent with the existence of negative capacitance. Here, we present the dielectric permittivity and DC resistivity of bulk Cu-Cl boracite as a function of temperature (−140 to 150 °C) and frequency (1 mHz to 10 MHz). The thermal behavior of the two observed dielectric relaxations and the DC resistivity is discussed. We propose that the relaxations can be explained by the existence of point defects, most likely local complexes created by a change of valence of Cu and accompanying oxygen vacancies. In addition, the sudden change in resistivity seen at the phase transition suggests that conductive domain walls contribute significantly to the conductivity in the ferroelectric phase.