| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Melskens, Jimmy
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2023The native and metastable defects and their joint density of states in hydrogenated amorphous silicon obtained from the improved dual beam photoconductivity methodcitations
- 2022POx/Al2O3 stacks for surface passivation of Si and InPcitations
- 2022POx/Al2O3 stacks for surface passivation of Si and InPcitations
- 2021Infrared optical properties:Hydrogen bonding and stability
- 2021Surface passivation of germanium by atomic layer deposited Al2O3 nanolayerscitations
- 2021Surface passivation of germanium by atomic layer deposited Al2O3 nanolayerscitations
- 2021Excellent surface passivation of germanium by a-Si:H/Al2O3 stackscitations
- 2020Self-aligned local contact opening and n+ diffusion by single-step laser doping from POx/Al2O3 passivation stackscitations
- 2020Self-aligned local contact opening and n+ diffusion by single-step laser doping from POx/Al2O3 passivation stackscitations
- 2019Performance and thermal stability of an a-Si:H/TiOx/Yb stack as an electron-selective contact in silicon heterojunction solar cellscitations
- 2018Passivating electron-selective contacts for silicon solar cells based on an a-Si:H/TiOx stack and a low work function metalcitations
- 2018Atomic-layer deposited Nb2O5 as transparent passivating electron contact for c-Si solar cellscitations
- 2018Light-induced reversible optical properties of hydrogenated amorphous silicon:a promising optically programmable photonic materialcitations
- 2018Status and prospects for atomic layer Deposited metal oxide thin films in passivating contacts for c-Si photovoltaics
- 2018Passivating electron-selective contacts for silicon solar cells based on an a-Si:H/TiO x stack and a low work function metalcitations
Places of action
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article
Excellent surface passivation of germanium by a-Si:H/Al2O3 stacks
Abstract
Surface passivation of germanium is vital for optimal performance of Ge based optoelectronic devices especially considering their rapidly<br/>increasing surface-to-volume ratios. In this work, we have investigated the surface passivation of Ge by a stack consisting of a thin layer of<br/>hydrogenated amorphous silicon (a-Si:H) and an aluminum oxide (Al2O3) capping layer. Plasma-enhanced chemical vapor deposition was<br/>used to deposit the a-Si:H (0–10 nm), while thermal and plasma-enhanced atomic layer deposition (ALD) were employed for the Al2O3<br/>films (0–22 nm). Transient photoconductance decay measurements revealed a recombination velocity as low as 2.7 cm s−1 for an a-Si:H<br/>layer as thin as 1.8 nm and an Al2O3 film of only ∼6 nm. In this state-of-the-art passivation scheme, the plasma-enhanced ALD process for<br/>the Al2O3 capping layer proved superior to the thermal ALD process since it resulted in an exceptionally high negative fixed charge density<br/>(Qf ∼ 1013 cm−2), which proved a key factor for the low surface recombination velocity. Transmission electron microscopy and energy x-ray<br/>dispersion revealed that a thin SiOx layer (∼1.4 nm) forms between a-Si:H and Al2O3 during the ALD process, which is thought to be the<br/>origin of this high negative fixed charge density. This passivation stack is regarded as highly interesting for applications such as solar cells,<br/>nanolasers, and nano-LEDs based on p-type Ge.