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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Frentrup, Martin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well
- 2024Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well.
- 2023Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVDcitations
- 2023Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopycitations
- 2023Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopycitations
- 2021Defect structures in (001) zincblende GaN/3CSiC nucleation layerscitations
- 2021Defect structures in (001) zincblende GaN/3C-SiC nucleation layerscitations
- 2021The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayerscitations
- 2020Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering.
- 2020Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wellscitations
- 2020Ti Alloyed α -Ga 2 O 3: Route towards Wide Band Gap Engineering
- 2019Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substratescitations
- 2019Investigation of MOVPE-grown zincblende GaN nucleation layers on 3CSiC/Si substratescitations
- 2019Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEMcitations
- 2017Photoluminescence studies of cubic GaN epilayerscitations
- 2017X-ray diffraction analysis of cubic zincblende III-nitrides
- 2015Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon.
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article
The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayers
Abstract
The effects of thermal annealing on the optical properties of Mg-doped cubic zincblende GaN epilayers grown by metalorganic chemical vapor deposition on 3C-SiC/Si (001) substrates are investigated. The photoluminescence spectra show near band edge features and a blue luminescence band that depend on Mg concentration, temperature, and excitation power density. Annealing the sample in a N2 atmosphere causes the intensity of the blue band to increase by a factor of 5. Power dependent photoluminescence measurements show a reduction in the laser excitation density required for saturation of the blue band after annealing, indicating an increase in the recombination lifetime. Time decay measurements confirm this increase, which is attributed to a reduction in the concentration of non-radiative defects after annealing. The results presented here are compared to those reported previously for Mg-doped hexagonal wurtzite GaN.