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Church, Stephen
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Publications (5/5 displayed)
- 2022Polarised Emission from Quantum Wires in Cubic GaN
- 2021The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayerscitations
- 2020Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wellscitations
- 2018Effect of stacking faults on the photoluminescence spectrum of zincblende GaNcitations
- 2017Photoluminescence studies of cubic GaN epilayerscitations
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article
The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayers
Abstract
The effects of thermal annealing on the optical properties of Mg-doped cubic zincblende GaN epilayers grown by metalorganic chemical vapor deposition on 3C-SiC/Si (001) substrates are investigated. The photoluminescence spectra show near band edge features and a blue luminescence band that depend on Mg concentration, temperature, and excitation power density. Annealing the sample in a N2 atmosphere causes the intensity of the blue band to increase by a factor of 5. Power dependent photoluminescence measurements show a reduction in the laser excitation density required for saturation of the blue band after annealing, indicating an increase in the recombination lifetime. Time decay measurements confirm this increase, which is attributed to a reduction in the concentration of non-radiative defects after annealing. The results presented here are compared to those reported previously for Mg-doped hexagonal wurtzite GaN.