| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Saint-Girons, Guillaume
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024Integration of epitaxial LiNbO3 thin films with silicon technologycitations
- 2024Reversible Single‐Pulse Laser‐Induced Phase Change of Sb 2 S 3 Thin Films: Multi‐Physics Modeling and Experimental Demonstrationscitations
- 2023Strain generated by the stacking faults in epitaxial SrO(SrTiO 3 ) N Ruddlesden–Popper structures
- 2021Giant Tuning of Electronic and Thermoelectric Properties by Epitaxial Strain in p-Type Sr-Doped LaCrO 3 Transparent Thin Filmscitations
- 2021Spectroscopic ellipsometry: a sensitive tool to monitor domains formation during the bias enhanced nucleation of heteroepitaxial diamondcitations
- 2021Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical propertiescitations
- 2019Perovskite-oxide based hyperbolic metamaterialscitations
- 2019Poisson ratio and bulk lattice constant of (Sr 0.25 La 0.75 )CrO 3 from strained epitaxial thin filmscitations
- 2019Enhanced ferroelectricity in epitaxial Hf 0.5 Zr 0.5 O 2 thin films integrated with Si(001) using SrTiO 3 templatescitations
- 2016Epitaxy of SrTiO3 on Silicon: The Knitting Machine Strategycitations
- 2016Development of Epitaxial Oxide Ceramics Nanomaterials Based on Chemical Strategies on Semiconductor Platforms
- 2015Capping and decapping GaAs nanowires with As for preventing oxidation and for epitaxial shell growth
- 2014Structural study and ferroelectricity of epitaxial BaTiO3 films on silicon grown by molecular beam epitaxycitations
- 2013LaAlO 3 /Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical propertiescitations
- 2010Oxides heterostructures for nanoelectronicscitations
- 2004Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networkscitations
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article
Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties
Abstract
<jats:p>Single-crystalline Zn3N2 thin films have been grown on MgO (100) and YSZ (100) substrates by plasma-assisted molecular beam epitaxy. Depending on growth conditions, the film orientation can be tuned from (100) to (111). For each orientation, x-ray diffraction and reflection high-energy electron diffraction are used to determine the epitaxial relationships and to quantify the structural quality. Using high-temperature x-ray diffraction, the Zn3N2 linear thermal expansion coefficient is measured with an average of (1.5 ± 0.1) × 10−5 K−1 in the range of 300–700 K. The Zn3N2 films are found to be systematically n-type and degenerate, with carrier concentrations of 1019–1021 cm−3 and electron mobilities ranging from 4 to 388 cm2 V−1 s−1. Low-temperature Hall effect measurements show that ionized impurity scattering is the main mechanism limiting the mobility. The large carrier densities lead to measured optical bandgaps in the range of 1.05–1.37 eV due to Moss–Burstein band filling, with an extrapolated value of 0.99 eV for actual bandgap energy.</jats:p>