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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Fang, Xufei
Karlsruhe Institute of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2024Switching the fracture toughness of single-crystal ZnS using light irradiation
- 2024Harvesting room-temperature plasticity in ceramics by mechanically seeded dislocationscitations
- 2024Dislocation‐induced local symmetry reduction in single‐crystal KNbO₃ observed by Raman spectroscopy
- 2021Switching the fracture toughness of single-crystal ZnS using light irradiationcitations
- 2021Dislocation-toughened ceramicscitations
- 2021Nanoindentation pop‐in in oxides at room temperature: Dislocation activation or crack formation?citations
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article
Switching the fracture toughness of single-crystal ZnS using light irradiation
Abstract
<jats:p>An enormous change in the dislocation-mediated plasticity has been found in a bulk semiconductor that exhibits the photoplastic effect. Herein, we report that UV (365 nm) light irradiation during mechanical testing dramatically decreases the fracture toughness of ZnS. The crack tip toughness on a (001) single-crystal ZnS, as measured by the near-tip crack opening displacement method, is increased by ∼45% in complete darkness compared to that in UV light. The increase in fracture toughness is attributed to a significant increase in the dislocation mobility in darkness, as explained by the crack tip dislocation shielding model. Our finding suggests a route toward controlling the fracture toughness of photoplastic semiconductors by tuning the light irradiation.</jats:p>