| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lichtensteiger, Céline
Universidad de Cantabria
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Direct imaging of the magnetoelectric coupling in multiferroic BaTiO3/La0.9Ba0.1MnO3citations
- 2023Mapping the complex evolution of ferroelastic/ferroelectric domain patterns in epitaxially strained PbTiO3 heterostructurescitations
- 2021Microstructure of epitaxial Mg3N2 thin films grown by MBEcitations
- 2021Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical propertiescitations
- 2020Full control of polarization in ferroelectric thin films using growth temperature to modulate defectscitations
- 2019Strain-engineering Mott-insulating La2CuO4citations
- 2016Positive effect of an internal depolarization field in ultrathin epitaxial ferroelectric filmscitations
- 2016Positive Effect of an Internal Depolarization Field in Ultrathin Epitaxial Ferroelectric Filmscitations
- 2009Electric-field tuning of the metal-insulator transition in ultrathin films of LaNiO3citations
- 2007Monodomain to polydomain transition in ferroelectric PbTiO3 thin films with La0.67Sr0.33MnO3 electrodescitations
Places of action
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article
Microstructure of epitaxial Mg3N2 thin films grown by MBE
Abstract
<jats:p>The epitaxial growth of Mg3N2 thin films by molecular beam epitaxy has been recently achieved. This work presents the structural properties of the films, including grain sizes and lattice rotations, as assessed by x-ray diffraction and transmission electron microscopy. The films’ microstructure consists of well-aligned columnar grains 10 nm in diameter that nucleate at the film/substrate interface and display a significant column twist, in the order of 2.5°. As growth proceeds, tilted and twisted mosaic blocks overgrow these columns, as observed in many other epitaxial semiconductors. Yet, the rocking curves on symmetric reflections display extremely narrow peaks (∼50 arc sec), revealing a long-range spatial correlation between structural defects that should not be mistakenly considered a proof of high crystalline quality.</jats:p>