| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Simanjuntak, Firman Mangasa
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024Forming-free and non-linear resistive switching in bilayer HfOx/TaOx memory devices by interface-induced internal resistancecitations
- 2024Spatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealingcitations
- 2022Annealing induced cation diffusion in TaOx-based memristor and its compatibility for back-end-of-line post-processingcitations
- 2022Effects of surface polarity on the structure and magnetic properties of epitaxial h-YMnO3 thin films grown on MgO substratescitations
- 2021Practical approach to induce analog switching behavior in memristive devices: digital-to-analog transformationcitations
- 2021Crafting the multiferroic BiFeO3-CoFe2O4 nanocomposite for next-generation devices: a reviewcitations
- 2021Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applicationscitations
- 2018The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO 2 -based resistive switching random access memory devicescitations
- 2018The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devicescitations
- 2018Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layercitations
- 2017Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cellcitations
Places of action
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article
Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications
Abstract
<p>An oxidizable metal diffusion barrier inserted between the active metal electrode and the switching layer decreases the electroforming voltage and enhances the switching stability and synaptic performances in TaOx-based conducting bridge memristor devices. The TiW barrier layer avoids an excessive metal ion diffusion into the switching layer, while the TiWOx interfacial layer is formed between the barrier and the switching layer. It modulates the oxygen vacancy distribution at the top interface and contributes to the formation and rupture of the metal ion-oxygen vacancy hybrid conducting bridge. We observe that the device that relies upon non-hybrid (metal ions only) conducting bridge suffers from poor analogous performance. Meanwhile, the device made with the barrier layer is capable of providing 2-bit memory and robust 50 stable epochs. TaOx also acts as resistance for suppressing and a thermal enhancement layer, which helps to minimize overshooting current. The enhanced analog device with high linear weight update shows multilevel cell characteristics and stable 50 epochs. To validate the neuromorphic characteristic of the devices, a simulated neural network of 100 synapses is used to recognize 10 x 10 pixel images.</p>