| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sasioglu, Ersoy
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Spin-polarized two-dimensional electron/hole gas at the interface of non-magnetic semiconducting half-Heusler compounds: Modified Slater-Pauling rule for half-metallicity at the interface
- 2021First principles design of Ohmic spin diodes based on quaternary Heusler compoundscitations
- 2020Half-Metal–Spin-Gapless-Semiconductor Junctions as a Route to the Ideal Diodecitations
- 2020Ab initio design of quaternary Heusler compounds for reconfigurable magnetic tunnel diodes and transistorscitations
- 2019Proposal for Reconfigurable Magnetic Tunnel Diode and Transistorcitations
- 2017A first-principles DFT+GW study of spin-filter and spin-gapless semiconducting Heusler compoundscitations
- 2016Itinerant G-type antiferromagnetism in D0$_3$-type V$_3$Z (Z=Al, Ga, In) compounds: A first-principles studycitations
- 2016Quasiparticle band structure of the almost-gapless transition-metal-based Heusler semiconductors143citations
- 2016Quasiparticle band structure of the almost-gapless transition-metal-based Heusler semiconductorscitations
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article
First principles design of Ohmic spin diodes based on quaternary Heusler compounds
Abstract
The Ohmic spin diode (OSD) is a recent concept in spintronics, which is based on half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to realize the OSD for room temperature applications as these materials possess very high Curie temperatures as well as half-metallic and spin-gapless semiconducting behavior within the same family. Using state-of-the-art first-principles calculations combined with the non-equilibrium Green's function method we design four different OSDs based on half-metallic and spin-gapless semiconducting quaternary Heusler compounds. All four OSDs exhibit linear current-voltage ($I-V$) characteristics with zero threshold voltage $V_T$. We show that these OSDs possess a small leakage current, which stems from the overlap of the conduction and valence band edges of opposite spin channels around the Fermi level in the SGS electrodes. The obtained on/off current ratios vary between $30$ and $10^5$. Our results can pave the way for the experimental fabrication of t he OSDs within the family of ordered quaternary Heusler compounds.