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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Massabuau, Fcp
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga<sub>2</sub>O<sub>3</sub>citations
- 2024Constant Photocurrent Method to Probe the Sub-Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α-Ga 2 O 3
- 2021Defect structures in (001) zincblende GaN/3CSiC nucleation layerscitations
- 2021Defect structures in (001) zincblende GaN/3C-SiC nucleation layerscitations
- 2021Directly correlated microscopy of trench defects in InGaN quantum wellscitations
- 2020Piezoelectric III-V and II-VI semiconductorscitations
- 2020Integrated wafer scale growth of single crystal metal films and high quality graphenecitations
- 2020Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etchingcitations
- 2019Investigation of MOVPE-grown zincblende GaN nucleation layers on 3CSiC/Si substratescitations
- 2019Thick adherent diamond films on AlN with low thermal barrier resistancecitations
- 2019Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer depositioncitations
- 2017Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth
- 2017X-ray diffraction analysis of cubic zincblende III-nitrides
- 2017Dislocations in AlGaN: core structure, atom segregation, and optical propertiescitations
- 2014Structure and strain relaxation effects of defects in InxGa1-xN epilayerscitations
- 2014Structure and strain relaxation effects of defects in In x Ga 1-x N epilayers
- 2013Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wellscitations
- 2012Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structurescitations
- 2011The effects of Si doping on dislocation movement and tensile stress in GaN filmscitations
Places of action
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article
Defect structures in (001) zincblende GaN/3CSiC nucleation layers
Abstract
The defect structure of zincblende GaN nucleation layers grown by metalorganic vapor-phase epitaxy on 3C-SiC/Si (001) was investigated by high-resolution scanning transmission electron microscopy. Perfect dislocations, partial dislocations, and stacking faults are present in the layers. Perfect dislocations are identified as 60° mixed-type and act as misfit dislocations to relieve the compressive lattice mismatch strain in GaN. Stacking faults are mainly bounded by 30° Shockley partial dislocations and rarely by Lomer–Cottrell partial dislocations, both of which are able to relieve the compressive lattice mismatch strain in the layer. We propose that the stacking faults and their partial dislocations originate from the dissociation of perfect dislocations present in the zincblende GaN layer and by direct nucleation of partial dislocations loops from the surface. These are the two main mechanisms that lead to the final defect structure of the zincblende GaN nucleation layers.