| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Eng, Lukas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2024Probing Ferroelectric Phase Transitions in Barium Titanate Single Crystals via in-situ Second Harmonic Generation Microscopy
- 2023Impact of Ferroelectric Layer Thickness on Reliability of Back-End-of-Line-Compatible Hafnium Zirconium Oxide Filmscitations
- 2023A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High-Temperature Annealingcitations
- 2023Polarization Sensitivity in Scattering-Type Scanning Near-Field Optical Microscopy—Towards Nanoellipsometrycitations
- 2022Atomic layer deposition of yttrium iron garnet thin filmscitations
- 2022Effect of Al2O3 interlayers on the microstructure and electrical response of ferroelectric doped HfO2 thin filmscitations
- 2021Aging in Ferroelectric Si-Doped Hafnium Oxide Thin Filmscitations
- 2021Electric field-induced crystallization of ferroelectric hafnium zirconium oxidecitations
- 2021Tricyanidoferrates(−IV) and Ruthenates(−IV) with Non-Innocent Cyanido Ligandscitations
- 2021Influence of Annealing Temperature on the Structural and Electrical Properties of Si-Doped Ferroelectric Hafnium Oxidecitations
- 2021Impact of the SiO2interface layer on the crystallographic texture of ferroelectric hafnium oxidecitations
- 2020Structural and electrical comparison of si and zr doped hafnium oxide thin films and integrated fefets utilizing transmission kikuchi diffractioncitations
- 2016Multidomain Skyrmion Lattice State in Cu2OSeO3citations
- 2015Conductivity and magnetoresistance of La0.7Ce0.3MnO3-δ thin films under photoexcitationcitations
- 2015Optical antennae for near-field induced nonlinear photochemical reactions of photolabile azo-and amine groups
- 2014The Mn2+/Mn3+ state of La0.7Ce 0.3MnO3 by oxygen reduction and photodopingcitations
- 2014Near-field resonance shifts of ferroelectric barium titanate domains upon low-temperature phase transitioncitations
- 2013Strain-mediated elastic coupling in magnetoelectric nickel/barium-titanate heterostructurescitations
- 2010Web-like domain structure formation in barium titanate single crystalscitations
- 2010Poly(2-(dimethylamino)ethyl methacrylate) brushes with incorporated nanoparticles as a SERS active sensing layercitations
- 2010Fabrication of two-dimensional Au@FePt core-shell nanoparticle arrays by photochemical metal depositioncitations
- 2009Probing polarization and dielectric function of molecules with higher order harmonics in scattering-near-field scanning optical microscopycitations
- 2009Ferroelectric Lithographycitations
- 2005Surface photovoltage spectroscopy for the investigation of perovskite oxide interfacescitations
- 2002Metal salt complexation of spin-coated ultrathin diazosulfonate terpolymer filmscitations
- 2002Novel diazosulfonate terpolymers for the preparation of structured functionalized surfaces
Places of action
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article
Impact of the SiO2interface layer on the crystallographic texture of ferroelectric hafnium oxide
Abstract
<p>Applying transmission Kikuchi diffraction (TKD) allows us to fundamentally investigate the Si-doped-hafnium-oxide (HSO) microstructure that results from the interface layer present in ferroelectric field-effect transistors. In addition to the predominant orthorhombic phase, dendritic HSO grains larger than 100 nm govern the microstructure composition. Furthermore, the observed strong out-of-plane texture aligned along the [110] and [011] axis clearly differs from features found in hafnium oxide thin films grown on TiN layers. Our TKD analysis shows that the texture intensity strongly varies for samples annealed at different temperatures. Additionally, intra-granular misorientation and chemical composition analyses of the layers provide insight into the crystallization process of these ferroelectric thin films.</p>