People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Godel, Florian
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024A local study of the transport mechanisms in MoS2 layers for magnetic tunnel junctionscitations
- 2024Control of the magnetic anisotropy in multirepeat Pt/Co/Al heterostructures using magnetoionic gatingcitations
- 2023Onset of multiferroicity in prototypical single spin cycloid BiFeO 3 thin filmscitations
- 2022Quantitative Imaging of Exotic Antiferromagnetic Spin Cycloids in Bi Fe O 3 Thin Filmscitations
- 2022Almost Perfect Spin Filtering in Graphene-Based Magnetic Tunnel Junctionscitations
- 2022Three-dimensional skyrmionic cocoons in magnetic multilayerscitations
- 2022Combined spin filtering actions in hybrid magnetic junctions based on organic chains covalently attached to graphenecitations
- 20210D/2D Heterostructures Vertical Single Electron Transistorcitations
- 20210D/2D Heterostructures Vertical Single Electron Transistorcitations
- 2021Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructurescitations
- 2021Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructurescitations
- 2021A perpendicular graphene/ferromagnet electrode for spintronicscitations
- 2021WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuitscitations
- 2020Ultrafast spin-currents and charge conversion at 3d-5d interfaces probed by time-domain terahertz spectroscopycitations
- 2020WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuitscitations
- 2019Band-Structure Spin-Filtering in Vertical Spin Valves Based on Chemical Vapor Deposited WS2citations
- 2018Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitridecitations
- 2018Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitridecitations
- 2017Tuning contact transport mechanisms in bilayer MoSe 2 transistors up to Fowler–Nordheim regimecitations
Places of action
Organizations | Location | People |
---|
article
Ultrafast spin-currents and charge conversion at 3d-5d interfaces probed by time-domain terahertz spectroscopy
Abstract
<jats:p>Spintronic structures are extensively investigated for their spin–orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-transition metal interfaces due to their inverse spin-Hall effect properties. In particular, the intrinsic inverse spin-Hall effect of Pt-based systems and extrinsic inverse spin-Hall effect of Au:W and Au:Ta in NiFe/Au:(W,Ta) bilayers are investigated. The spin-charge conversion is probed by complementary techniques—ultrafast THz time-domain spectroscopy in the dynamic regime for THz pulse emission and ferromagnetic resonance spin-pumping measurements in the GHz regime in the steady state—to determine the role played by the material properties, resistivities, spin transmission at metallic interfaces, and spin-flip rates. These measurements show the correspondence between the THz time-domain spectroscopy and ferromagnetic spin-pumping for the different set of samples in term of the spin mixing conductance. The latter quantity is a critical parameter, determining the strength of the THz emission from spintronic interfaces. This is further supported by ab initio calculations, simulations, and analysis of the spin-diffusion and spin-relaxation of carriers within the multilayers in the time domain, permitting one to determine the main trends and the role of spin transmission at interfaces. This work illustrates that time-domain spectroscopy for spin-based THz emission is a powerful technique to probe spin-dynamics at active spintronic interfaces and to extract key material properties for spin-charge conversion.</jats:p>