• Glöß, Maria
• Wiemann, Carsten
• Schneider, Claus M.
• Müller, Martina
• Hamed, Mai Hussein
• Giesen, Margret
• Petracic, Oleg
• Nemšák, Slavomír
• Duchoň, Tomáš
• Bäumer, Christoph
• Moors, Marco
• Mueller, David N.
• Dittmann, Regina
• Wilhelm, Marek
• Zhang, Hengbo
• Cao, Lei
• Cramm, Stefan
• Hackl, Johanna

Abstract

<p>Magneto-ionic control of magnetism is a promising route toward the realization of non-volatile memory and memristive devices. Magneto-ionic oxides are particularly interesting for this purpose, exhibiting magnetic switching coupled to resistive switching, with the latter emerging as a perturbation of the oxygen vacancy concentration. Here, we report on electric-field-induced magnetic switching in a La0.7Sr0.3MnO3 (LSMO) thin film. Correlating magnetic and chemical information via photoemission electron microscopy, we show that applying a positive voltage perpendicular to the film surface of LSMO results in the change in the valence of the Mn ions accompanied by a metal-to-insulator transition and a loss of magnetic ordering. Importantly, we demonstrate that the voltage amplitude provides granular control of the phenomena, enabling fine-tuning of the surface electronic structure. Our study provides valuable insight into the switching capabilities of LSMO that can be utilized in magneto-ionic devices.</p>

Topics

• impedance spectroscopy
• surface
• thin film
• Oxygen
• electron microscopy
• vacancy