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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Denbaars, Steven P.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodescitations
- 2022Guest Editorial Introduction to the Special Issue on Semiconductor Optoelectronic Materials and Devices
- 2021Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction controlcitations
- 2021Highly Conductive n-Al0.65Ga0.35N Grown by MOCVD Using Low V/III Ratiocitations
- 2021Damage-free substrate removal technique: wet undercut etching of semipolar 202¯1 laser structures by incorporation of un/relaxed sacrificial layer single quantum well
- 2021New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substratecitations
- 2021Highly Conductive n-Al 0.65 Ga 0.35 N Grown by MOCVD Using Low V/III Ratio
- 2020Lift-off of semipolar blue and green III-nitride LEDs grown on free-standing GaNcitations
- 2012Optical Characterization of Double Peak Behavior in {10(1)over-bar1} Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substratescitations
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article
Lift-off of semipolar blue and green III-nitride LEDs grown on free-standing GaN
Abstract
<jats:p>Light emitting diodes (LEDs), with active blue and green emitting and sacrificial multi-quantum well layers, were epitaxially grown using metal organic chemical vapor deposition on free-standing semipolar (202¯1) GaN substrates. NanoLEDs were then fabricated and released into solution using an approach based on forming a mm-scale mesa, Au–Au thermocompression bonding to a submount, large-area photoelectrochemical etching, and colloidal lithography. Photo- and cathodoluminescence (CL) measurements demonstrated that nanoLEDs were optically active after fabrication and released into the solution. Monte Carlo simulations of the electron trajectory through GaN/InGaN were performed to understand the patterns shown in CL images. The fabrication process developed herein could provide a viable route to highly efficient, nanoscale blue and green light emitters for applications in next-generation display technologies.</jats:p>