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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Frentrup, Martin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well
- 2024Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well.
- 2023Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVDcitations
- 2023Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopycitations
- 2023Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopycitations
- 2021Defect structures in (001) zincblende GaN/3CSiC nucleation layerscitations
- 2021Defect structures in (001) zincblende GaN/3C-SiC nucleation layerscitations
- 2021The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayerscitations
- 2020Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering.
- 2020Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wellscitations
- 2020Ti Alloyed α -Ga 2 O 3: Route towards Wide Band Gap Engineering
- 2019Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substratescitations
- 2019Investigation of MOVPE-grown zincblende GaN nucleation layers on 3CSiC/Si substratescitations
- 2019Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEMcitations
- 2017Photoluminescence studies of cubic GaN epilayerscitations
- 2017X-ray diffraction analysis of cubic zincblende III-nitrides
- 2015Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon.
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article
Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells
Abstract
Zincblende InGaN/GaN quantum wells offer a potential improvement to the efficiency of green light emission by removing the strong electric fields present in similar structures. However, a high density of stacking faults may have an impact on the recombination in these systems. In this work, scanning transmission electron microscopy and energy-dispersive x-ray measurements demonstrate that one-dimensional nanostructures form due to indium segregation adjacent to stacking faults. In photoluminescence experiments, these structures emit visible light, which is optically polarized up to 86% at 10 K and up to 75% at room temperature. The emission redshifts and broadens as the well width increases from 2 nm to 8 nm. Photoluminescence excitation measurements indicate that carriers are captured by these structures from the rest of the quantum wells and recombine to emit light polarized along the length of these nanostructures.