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Church, Stephen
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Publications (5/5 displayed)
- 2022Polarised Emission from Quantum Wires in Cubic GaN
- 2021The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayerscitations
- 2020Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wellscitations
- 2018Effect of stacking faults on the photoluminescence spectrum of zincblende GaNcitations
- 2017Photoluminescence studies of cubic GaN epilayerscitations
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article
Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells
Abstract
Zincblende InGaN/GaN quantum wells offer a potential improvement to the efficiency of green light emission by removing the strong electric fields present in similar structures. However, a high density of stacking faults may have an impact on the recombination in these systems. In this work, scanning transmission electron microscopy and energy-dispersive x-ray measurements demonstrate that one-dimensional nanostructures form due to indium segregation adjacent to stacking faults. In photoluminescence experiments, these structures emit visible light, which is optically polarized up to 86% at 10 K and up to 75% at room temperature. The emission redshifts and broadens as the well width increases from 2 nm to 8 nm. Photoluminescence excitation measurements indicate that carriers are captured by these structures from the rest of the quantum wells and recombine to emit light polarized along the length of these nanostructures.