| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kamalakar, M. Venkata
Uppsala University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Large-Scale Direct Growth of Monolayer MoS2 on Patterned Graphene for van der Waals Ultrafast Photoactive Circuitscitations
- 2024Synchronized Photoluminescence and Electrical Mobility Enhancement in 2D WS2 through Sequence-Specific Chemical Passivationcitations
- 2024Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuitscitations
- 2022Proximity enhanced magnetism at NiFe2O4/Graphene interfacecitations
- 2021Combined Bottom-Up and Top-Down Approach for Highly Ordered One-Dimensional Composite Nanostructures for Spin Insulatronicscitations
- 2021Ultralow magnetostrictive flexible ferromagnetic nanowires daggercitations
- 2021Ultralow magnetostrictive flexible ferromagnetic nanowirescitations
- 2021Highly-efficient growth of cobalt nanostructures using focused ion beam induced deposition under cryogenic conditions : application to electrical contacts on graphene, magnetism and hard maskingcitations
- 2020High thermoelectric power factor of <i>p</i>-type amorphous silicon thin films dispersed with ultrafine silicon nanocrystalscitations
- 2020Flexible transparent graphene laminates via direct lamination of graphene onto polyethylene naphthalate substratescitations
- 2020Two-dimensional van der Waals spinterfaces and magnetic-interfacescitations
- 2020Fermi velocity renormalization in graphene probed by terahertz time-domain spectroscopycitations
- 2019Dramatic magnetic phase designing in phosphorenecitations
- 2017Tuning contact transport mechanisms in bilayer MoSe 2 transistors up to Fowler–Nordheim regimecitations
Places of action
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article
High thermoelectric power factor of <i>p</i>-type amorphous silicon thin films dispersed with ultrafine silicon nanocrystals
Abstract
<jats:p>Silicon, a candidate as an abundant-element thermoelectric material for low-temperature thermal energy scavenging applications, generally suffers from rather low thermoelectric efficiency. One viable solution to enhancing the efficiency is to boost the power factor (PF) of amorphous silicon (a-Si) while keeping the thermal conductivity sufficiently low. In this work, we report that PF &gt;1 m Wm−1 K−2 is achievable for boron-implanted p-type a-Si films dispersed with ultrafine crystals realized by annealing with temperatures ≤600 °C. Annealing at 550 °C initiates crystallization with sub-5-nm nanocrystals embedded in the a-Si matrix. The resultant thin films remain highly resistive and thus yield a low PF. Annealing at 600 °C approximately doubles the density of the sub-5-nm nanocrystals with a bimodal size distribution characteristic and accordingly reduces the fraction of the amorphous phase in the films. Consequently, a dramatically enhanced electrical conductivity up to 104 S/m and hence PF &gt; 1 m Wm−1 K−2 measured at room temperature are achieved. The results show the great potential of silicon in large-scale thermoelectric applications and establish a route toward high-performance energy harvesting and cooling based on silicon thermoelectrics.</jats:p>