| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Di Nuzzo, Daniele
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2020Circularly Polarized Photoluminescence from Chiral Perovskite Thin Films at Room Temperaturecitations
- 2020A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors.
- 2020A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors.
- 2020Graphene-passivated nickel as an efficient hole-injecting electrode for large area organic semiconductor devicescitations
- 2017Ultrafast Charge and Triplet State Formation in Diketopyrrolo-pyrrole Low Band gap Polymer/Fullerene Blends: Influence of Nanoscale Morphology of Organic Photovoltaic Materials on Charge Recombination to the Triplet State
- 2017Ultrafast charge and triplet state formation in Diketopyrrolopyrrole Low Band Gap Polymer/Fullerene blendscitations
- 2016 Improved performance of perovskite light-emitting diodes using a PEDOT:PSS and MoO3 composite layer
- 2010Efficient solar cells based on an easily accessible diketopyrrolopyrrole polymercitations
- 2010Improved Film Morphology Reduces Charge Carrier Recombination into the Triplet Excited State in a Small Bandgap Polymer‐Fullerene Photovoltaic Cellcitations
Places of action
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article
Graphene-passivated nickel as an efficient hole-injecting electrode for large area organic semiconductor devices
Abstract
Efficient injection of charge from metal electrodes into semiconductors is of paramount importance to obtain high performance optoelectronic devices. The quality of the interface between the electrode and the semiconductor must therefore be carefully controlled. The case of organic semiconductors presents specific problems: ambient deposition techniques, such as solution processing, restrict the choice of electrodes to those not prone to oxidation, limiting potential application. Additionally, damage to the semiconductor in sputter coating or high temperature thermal evaporation poses an obstacle to the use of many device-relevant metals as top electrodes in vertical metal-semiconductor-metal structures, making it preferable to use them as bottom electrodes. Here we propose a possible solution to these problems by implementing graphene-passivated nickel as an air stable bottom electrode in vertical devices comprising organic semiconductors. We use these passivated layers as hole-injecting bottom electrodes and we show that efficient charge injection can be achieved into standard organic semiconducting polymers, owing to an oxide free nickel/graphene/polymer interface. Crucially, we fabricate our electrodes with low roughness, which in turn allows us to produce large area devices (of the order of millimetre squares) without electrical shorts occurring. Our results make these graphene-passivated ferromagnetic electrodes a promising approach for large area organic optoelectronic and spintronic devices.