| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Pergolesi, Daniele
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024Anionic disorder and its impact on the surface electronic structure of oxynitride photoactive semiconductors
- 2023Momentum-resolved electronic structure of LaTiO2N photocatalysts by resonant Soft-X-ray ARPEScitations
- 2022Large imprint in epitaxial 0.67Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-0.33PbTiO<sub>3</sub> thin films for piezoelectric energy harvesting applicationscitations
- 2021Heteroepitaxial Hexagonal (00.1) CuFeO2 Thin Film Grown on Cubic (001) SrTiO3 Substrate Through Translational and Rotational Domain Matchingcitations
- 2020Thickness-dependent microstructural properties of heteroepitaxial (00.1) CuFeO2 thin films on (00.1) sapphire by pulsed laser depositioncitations
- 2019Zigzag or spiral-shaped nanostructures improve mechanical stability in yttria-stabilized zirconia membranes for micro-energy conversion devicescitations
- 2017Anisotropic Proton and Oxygen Ion Conductivity in Epitaxial Ba2In2O5 Thin Filmscitations
- 2017Anisotropic Proton and Oxygen Ion Conductivity in Epitaxial Ba 2 In 2 O 5 Thin Filmscitations
- 2016TiN-buffered substrates for photoelectrochemical measurements of oxynitride thin filmscitations
- 2015Probing the bulk ionic conductivity by thin film hetero-epitaxial engineeringcitations
- 2009Fabrication and Electrochemical Properties of Epitaxial Samarium-Doped Ceria Films on SrTiO3-Buffered MgO Substratescitations
Places of action
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article
Thickness-dependent microstructural properties of heteroepitaxial (00.1) CuFeO2 thin films on (00.1) sapphire by pulsed laser deposition
Abstract
<p>Typical low-temperature frustrated triangular antiferromagnet CuFeO<sub>2</sub> is attracting extensive interest due to its narrow-band-gap semiconductor properties. High-quality and impurity-free CuFeO<sub>2</sub> epitaxial thin films would be preferable for fundamental studies on the physical and chemical properties. However, the heteroepitaxial growth of impurity-free CuFeO<sub>2</sub> thin films has been a significant challenge due to its narrow formation window in the Cu-Fe-O system as well as the metastable nature of the Cu<sup>1+</sup> cations. This work reports for the first time the fabrication and characterization of high-quality and impurity-free (00.1)-oriented CuFeO<sub>2</sub> epitaxial thin films grown with relaxed interfaces on (00.1) sapphire substrates by pulsed laser deposition. Below the critical thickness of around 16 nm, the films exhibit a rhombohedral structure with relatively good crystalline quality where all Cu ions appear to be in the 1+ oxidation state, while the rocking curves display a narrow full width at half maximum of about 0.11°. Increasing the thickness, the (111)-oriented γ-Fe<sub>2</sub>O<sub>3</sub> nanograins grow embedded in the CuFeO<sub>2</sub> films. Here, an excess Fe<sup>3+</sup>-assisted growth mechanism is proposed to explain the iron oxide grain formation. This study provides insight into the heteroepitaxial growth of relaxed CuFeO<sub>2</sub> thin films with high purity and crystalline quality as an ideal sample design to characterize the fundamental properties of this material in view of potential device applications.</p>