| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ougazzaden, Abdallah
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2024Advancing Neutron Detection: Fabrication, Characterization, and Performance Evaluation of Self‐Powered PIN BGaN/GaN Superlattice‐Based Neutron Detectorscitations
- 2024High-quality hexagonal boron nitride selectively grown on patterned epigraphene by MOVPE
- 2024On the importance of Ni-Au-Ga interdiffusion in the formation of a Ni-Au / p-GaN ohmic contact
- 2023Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Templatecitations
- 2022Influence of Sapphire Substrate Orientation on the van der Waals Epitaxy of III-Nitrides on 2D Hexagonal Boron Nitride: Implication for Optoelectronic Devicescitations
- 2022Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BNcitations
- 2021Development and simulated environment testing of β-(Al)Ga 2 O 3 -based photodetectors for space-based observation of the Herzberg continuumcitations
- 2020Single crystalline boron rich B(Al)N alloys grown by MOVPEcitations
- 2019Wafer-scale MOVPE growth and characterization of highly ordered h-BN on patterned sapphire substratescitations
- 2018Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performancecitations
- 2015Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templatescitations
- 2014Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire templatecitations
- 2013Growth of "moth-eye" ZnO nanostructures on Si(111), c-Al2O3, ZnO and steel substrates by pulsed laser depositioncitations
Places of action
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article
Single crystalline boron rich B(Al)N alloys grown by MOVPE
Abstract
International audience ; Boron rich BAlN alloys have been grown on 2-inch sapphire substrates by Metal-Organic Vapor Phase Epitaxy. The surface morphology ofBAlN alloys exhibits a transition stage from a completely two-dimensional to a three-dimensional granular surface with an increased trime-thylaluminum/group III (TMAl/III) ratio. Only a shift in the position of the 002 plane reflection peak to higher diffraction angles in the2h ? x scan along with a decrease in intensity was observed, specifying formation of layered BAlN alloys up to a TMAl/III ratio of 14. AlNphase separation was observed while increasing the TMAl/III ratio to 25, supporting SEM observations. Secondary-ion mass spectrometrymeasurements confirmed the presence of up to 17% Al in layered BAlN alloy systems. A cross sectional transmission electron microscopy(TEM) study confirmed the layered nature of single phase BAlN alloys. It also revealed the presence of wurtzite Al rich BAlN phases in amatrix of layered hexagonal B rich BAlN. Band to band transition around 5.86eV has been observed, which shifted slightly to lower energywith increasing Al incorporation. The bowing parameter (C) in boron rich BAlN alloy systems was evaluated to be around 0.6560.05eV.Encouraging results were obtained on boron rich BAlN alloy formation, motivating further exploration of growth conditions and study ofBAlN fundamental properties for applications in deep UV optoelectronics.