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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kauppinen, Christoffer
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2023Air stable plasma passivation of GaAs at room temperature
- 2023Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon
- 2020Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaNcitations
- 2019Site-specific growth of oriented ZnO nanocrystal arrayscitations
- 2019Two-dimensional plasmons in a GaN/AlGaN heterojunctioncitations
- 2019Two-dimensional plasmons in a GaN/AlGaN heterojunction:Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronicscitations
- 2019Terahertz Emission due to Radiative Decay of Hot 2D Plasmons in AlGaN/GaN Heterojunction
- 2019Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructurecitations
- 2017Grass-like Alumina with Low Refractive Index for Scalable, Broadband, Omnidirectional Antireflection Coatings on Glass Using Atomic Layer Depositioncitations
- 2017MOVPE growth of GaN on 6-inch SOI-substratescitations
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article
Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN
Abstract
The metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN (0001) is demonstrated. The InP nanowires exhibit the same wurtzite structure as the underlying wurtzite GaN. The photoluminescence studies indicate that the InP nanowires are single-phase wurtzite with high crystalline quality which is supported by transmission and scanning electron microscopy images. The position of the second valence band or valence band splitting energy is also deduced from the photoluminescence data to be Δ<sub>AB</sub> = 30 meV at room temperature. The InP/GaN heterojunction can enable exotic optoelectronic and spintronic experiments and applications. In addition, these results can enable traditional III–V growth on III-N materials for heterojunction devices.