| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Albrecht, Martin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Polar discontinuity governs surface segregation and interface termination: A case study of LaInO$_3$/BaSnO$_3$citations
- 2024Polar discontinuity governs surface segregation and interface termination: A case study of LaIn O3/ BaSn O3
- 2024FAIR Data Infrastructure with Enhanced Functionality and Domain Specific Applications
- 2024FAIR Data Infrastructure with Enhanced Functionality and Domain Specific Applications
- 2023Dislocation climb in AlN crystals grown at low-temperature gradients revealed by 3D X-ray diffraction imagingcitations
- 2022Molecular beam epitaxy of single-crystalline bixbyite (In<SUB>1<SUB>−x</SUB>Ga<SUB>x</SUB> ) 2</SUB>O<SUB>3</SUB> films (x ≤0.18 ): Structural properties and consequences of compositional inhomogeneitycitations
- 2021Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxycitations
- 2020Control of phase formation of (AlxGa1 - X)2O3thin films on c-plane Al2O3
- 2020Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)citations
- 2019Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals
- 2018Defect generation by nitrogen during pulsed sputter deposition of GaNcitations
- 2016Synthesis and catalytic applications of 1,2,3-triazolylidene gold(I) complexes in silver-free oxazoline syntheses and C-H bond activationcitations
- 2012The Potential of N-Heterocyclic Carbene Complexes as Components for Electronically Active Materialscitations
- 2012A magnetic iron(III) switch with controlled and adjustable thermal response for solution processingcitations
- 2010The Potential of N-Heterocyclic Carbene Complexes as Components for Electronically Active Materialscitations
Places of action
| Organizations | Location | People |
|---|
article
Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)
Abstract
The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen-rich conditions was investigated at growth temperatures between 100 <SUP>°</SUP> C and 850 <SUP>°</SUP> C . Epitaxial growth of NiO(111) with two rotational domains, with epitaxial relation NiO ( 1 1 ̄ 0 ) ‖ GaN ( 11.0 ) and NiO ( 10 1 ̄ ) ‖ GaN ( 11.0 ), was observed by X-ray diffraction and confirmed by in situ reflection high-energy electron diffraction as well as transmission electron microscopy (TEM) and electron backscatter diffraction. With respect to the high lattice mismatch of 8.1% and a measured low residual tensile layer strain, growth by lattice matching epitaxy or domain-matching epitaxy is discussed. The morphology measured by atomic force microscopy showed a grainy surface, probably arising from the growth by columnar rotational domains visible in TEM micrographs. The domain sizes measured by AFM and TEM increase with the growth temperature, indicating an increasing surface diffusion length. Growth at 850 <SUP>°</SUP> C , however, involved local decomposition of the GaN substrate that leads to an interfacial β - <SUB>Ga 2</SUB> <SUB>O 3</SUB> ( 2 ̄ 01 ) layer and a high NiO surface roughness. Raman measurements of the quasiforbidden one-phonon peak indicate increasing layer quality (decreasing defect density) with increasing growth temperature....