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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ohsawa, Takeo
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Publications (4/4 displayed)
- 2022Reentrant structural and optical properties of organic-inorganic hybrid metal cluster compound ((n-C4H9)(4)N)(2)[(Mo6Br8Br6a)-Br-i]citations
- 2022Reentrant structural and optical properties of organic-inorganic hybrid metal cluster compound ((n-C4H9)(4)N)(2)[(Mo6Bri8Br6a)]citations
- 2019Suppressing the carrier concentration of zinc tin nitride thin films by excess zinc content and low temperature growthcitations
- 2017Simulation of crystal and electronic structures of octahedral molybdenum cluster complex compound Cs-2[Mo6Cl14] using various DFT functionalscitations
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article
Suppressing the carrier concentration of zinc tin nitride thin films by excess zinc content and low temperature growth
Abstract
<jats:p>We report the electrical properties of zinc tin nitride (Zn1+xSn1-xN2) thin films grown by reactive sputtering in an ultrahigh vacuum chamber. It is demonstrated that both the Zn-rich content and low-temperature growth are beneficial for suppressing the carrier concentration. Nondegenerate thin films with a composition of Zn/(Zn+Sn) = 0.72 show the carrier concentration of 2.7 × 1017 cm−3 at 300 K and the activation energy of 0.14 eV, which are in contrast to previously formed degenerate thin films with a much higher carrier concentration. Such electrical properties are consistent with the recent first-principles calculation, suggesting that excess Zn can reduce the amount of native donor-type Sn-on-Zn (SnZn2+) defects, while low-temperature growth can decrease the concentrations of unintentional donor-type oxygen-on-nitrogen (ON+) and/or hydrogen interstitial (Hi+) impurities. These results could provide a general framework for controlling the carrier concentration in II-IV-nitride semiconductors.</jats:p>