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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Wang, Tao
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2024A dual strategy to enhance the photoelectric performance of Perovskite-Based photodetectors for potential applications in optical communicationscitations
- 2024Influence of the γ/γ′ Misfit on the Strain-Age Cracking Resistance of High-γ′ Ni and CoNi Superalloys for Additive Manufacturing
- 2022Effect of vertical electromagnetic stirring on solute distribution in billet continuous casting processcitations
- 2021Numerical Simulation of Macrosegregation Formation in a 2.45 ton Steel Ingot Using a Three-Phase Equiaxed Solidification Modelcitations
- 2021Integrating van der Waals materials on paper substrates for electrical and optical applicationscitations
- 2020Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrayscitations
- 2020Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (112ˉ0) GaN
- 2020Luminescence behavior of semipolar (10-11) InGaN/GaN "bow-tie" structures on patterned Si substratescitations
- 2020Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (11-20) GaNcitations
- 2019Life-cycle assessment of emerging CO2 mineral carbonation-cured concrete blocks: Comparative analysis of CO2 reduction potential and optimization of environmental impactscitations
- 2018Dynamic behaviour of sub- m particles in dielectric liquids under DC stress
- 2017Spatially-resolved optical and structural properties of semi-polar (11-22) AlxGa1-xN with x up to 0.56citations
- 2017Observation of spin-orbit effects with spin rotation symmetrycitations
- 2015Evaluation of the Impact of Non-Inherited Maternal Antigens on the Outcome of HLA Mismatched Unrelated Donor Hematopoietic Stem Cell Transplantation for Hematological Malignancies on Behalf of the ALWP of the EBMT and the CIBMTR
- 2015Large scale Molecular Dynamics simulation of microstructure formation during thermal spraying of pure coppercitations
- 2012Characterization of thickness, elemental distribution and band-gap properties in AlGaN/GaN quantum wells by aberration-corrected TEM/STEMcitations
- 2012Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEMcitations
- 2010Electron microscopy of AlGaN-based multilayers for UV laser devices
Places of action
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article
Luminescence behavior of semipolar (10-11) InGaN/GaN "bow-tie" structures on patterned Si substrates
Abstract
<p>In this work, we report on the innovative growth of semipolar "bow-tie"-shaped GaN structures containing InGaN/GaN multiple quantum wells (MQWs) and their structural and luminescence characterization. We investigate the impact of growth on patterned (113) Si substrates, which results in the bow-tie cross section with upper surfaces having the (10-11) orientation. Room temperature cathodoluminescence (CL) hyperspectral imaging reveals two types of extended defects: black spots appearing in intensity images of the GaN near band edge emission and dark lines running parallel in the direction of the Si stripes in MQW intensity images. Electron channeling contrast imaging (ECCI) identifies the black spots as threading dislocations propagating to the inclined (10-11) surfaces. Line defects in ECCI, propagating in the [1-210] direction parallel to the Si stripes, are attributed to misfit dislocations (MDs) introduced by glide in the basal (0001) planes at the interfaces of the MQW structure. Identification of these line defects as MDs within the MQWs is only possible because they are revealed as dark lines in the MQW CL intensity images, but not in the GaN intensity images. Low temperature CL spectra exhibit additional emission lines at energies below the GaN bound exciton emission line. These emission lines only appear at the edge or the center of the structures where two (0001) growth fronts meet and coalesce (join of the bow-tie). They are most likely related to basal-plane or prismatic stacking faults or partial dislocations at the GaN/Si interface and the coalescence region.</p>