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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Naresh-Kumar, G.
Cardiff University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2022Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope
- 2021Correlation between deep-level defects and functional properties of β-(SnxGa1-x)2O3 on Si photodetectorscitations
- 2020Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscopecitations
- 2020Metrology of crystal defects through intensity variations in secondary electrons from the diffraction of primary electrons in a scanning electron microscopecitations
- 2020Luminescence behavior of semipolar (10-11) InGaN/GaN "bow-tie" structures on patterned Si substratescitations
- 2020Luminescence behavior of semipolar (101¯1) InGaN/GaN “bow-tie” structures on patterned Si substrates
- 2018Dislocation contrast in electron channelling contrast images as projections of strain-like componentscitations
- 2017Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffractioncitations
- 2017Spatially-resolved optical and structural properties of semi-polar (11-22) AlxGa1-xN with x up to 0.56citations
- 2017Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin filmscitations
- 2017Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashescitations
- 2016Reprint of
- 2016Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faultscitations
- 2016Electron channelling contrast imaging for III-nitride thin film structurescitations
- 2015Digital direct electron imaging of energy-filtered electron backscatter diffraction patternscitations
- 2014Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistorscitations
- 2013Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscopecitations
- 2012Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscopecitations
Places of action
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article
Luminescence behavior of semipolar (10-11) InGaN/GaN "bow-tie" structures on patterned Si substrates
Abstract
<p>In this work, we report on the innovative growth of semipolar "bow-tie"-shaped GaN structures containing InGaN/GaN multiple quantum wells (MQWs) and their structural and luminescence characterization. We investigate the impact of growth on patterned (113) Si substrates, which results in the bow-tie cross section with upper surfaces having the (10-11) orientation. Room temperature cathodoluminescence (CL) hyperspectral imaging reveals two types of extended defects: black spots appearing in intensity images of the GaN near band edge emission and dark lines running parallel in the direction of the Si stripes in MQW intensity images. Electron channeling contrast imaging (ECCI) identifies the black spots as threading dislocations propagating to the inclined (10-11) surfaces. Line defects in ECCI, propagating in the [1-210] direction parallel to the Si stripes, are attributed to misfit dislocations (MDs) introduced by glide in the basal (0001) planes at the interfaces of the MQW structure. Identification of these line defects as MDs within the MQWs is only possible because they are revealed as dark lines in the MQW CL intensity images, but not in the GaN intensity images. Low temperature CL spectra exhibit additional emission lines at energies below the GaN bound exciton emission line. These emission lines only appear at the edge or the center of the structures where two (0001) growth fronts meet and coalesce (join of the bow-tie). They are most likely related to basal-plane or prismatic stacking faults or partial dislocations at the GaN/Si interface and the coalescence region.</p>