| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vennéguès, Philippe
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024High-temperature dust formation in carbon-rich astrophysical environmentscitations
- 2024III-V/Si epitaxial growth and antiphase domains: a matter of symmetry
- 2024Low-Temperature Epitaxy of Fe 3 O 4 Thin Films on ZnO(0001) and Related Interface Studies ; Épitaxie à basse température de films minces de Fe₃O₄ sur ZnO(0001) et études associées de l'interface
- 2022CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growthcitations
- 2022On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientationscitations
- 2022Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BNcitations
- 2021Microstructure of epitaxial Mg3N2 thin films grown by MBEcitations
- 2020Luminescence behavior of semipolar (10-11) InGaN/GaN "bow-tie" structures on patterned Si substratescitations
- 2012On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substratescitations
Places of action
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article
Luminescence behavior of semipolar (10-11) InGaN/GaN "bow-tie" structures on patterned Si substrates
Abstract
<p>In this work, we report on the innovative growth of semipolar "bow-tie"-shaped GaN structures containing InGaN/GaN multiple quantum wells (MQWs) and their structural and luminescence characterization. We investigate the impact of growth on patterned (113) Si substrates, which results in the bow-tie cross section with upper surfaces having the (10-11) orientation. Room temperature cathodoluminescence (CL) hyperspectral imaging reveals two types of extended defects: black spots appearing in intensity images of the GaN near band edge emission and dark lines running parallel in the direction of the Si stripes in MQW intensity images. Electron channeling contrast imaging (ECCI) identifies the black spots as threading dislocations propagating to the inclined (10-11) surfaces. Line defects in ECCI, propagating in the [1-210] direction parallel to the Si stripes, are attributed to misfit dislocations (MDs) introduced by glide in the basal (0001) planes at the interfaces of the MQW structure. Identification of these line defects as MDs within the MQWs is only possible because they are revealed as dark lines in the MQW CL intensity images, but not in the GaN intensity images. Low temperature CL spectra exhibit additional emission lines at energies below the GaN bound exciton emission line. These emission lines only appear at the edge or the center of the structures where two (0001) growth fronts meet and coalesce (join of the bow-tie). They are most likely related to basal-plane or prismatic stacking faults or partial dislocations at the GaN/Si interface and the coalescence region.</p>