| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Khorani, Edris
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2024Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on siliconcitations
- 2023Mechanisms of silicon surface passivation by negatively charged hafnium oxide thin filmscitations
- 2023Stable chemical enhancement of passivating nanolayer structures grown by atomic layer deposition on siliconcitations
- 2023Electronic band offset determination of oxides grown by atomic layer deposition on siliconcitations
- 2023SiNx and AlOx nanolayers in hole selective passivating contacts for high efficiency silicon solar cellscitations
- 2023Data for Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on siliconcitations
- 2023Hafnium oxide : a thin film dielectric with controllable etch resistance for semiconductor device fabricationcitations
- 2022Engineering the carrier lifetime and switching speed in Si-based mm-wave photomodulatorscitations
- 2022Electronic characteristics of ultra‐thin passivation layers for silicon photovoltaicscitations
- 2022Light scattering from black silicon surfaces and its benefits for encapsulated solar cellscitations
- 2020Optoelectronic properties of ultrathin ALD silicon nitride and its potential as a hole-selective nanolayer for high efficiency solar cellscitations
- 2019Characterization of atomic layer deposited alumina thin films on black silicon textures using helium ion microscopycitations
- 2018Metal-assisted chemically etched black silicon for crystalline silicon solar cells
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document
Characterization of atomic layer deposited alumina thin films on black silicon textures using helium ion microscopy
Abstract
Black silicon (b-Si) refers to the nanoscale texturing of a silicon surface to reduce the reflectivity across a broad wavelength range. We fabricate b-Si using a metal assisted chemical etch (MACE) process and then electrically passivate<br/>the surface using atomic layer deposition (ALD) of alumina. A crucial step towards effective passivation is the necessity of uniform and conformal coverage of the nanostructures by the alumina film, which can be achieved by inserting a<br/>diffusion step for the precursors during the ALD process. We demonstrate excellent alumina coverage of b-Si nanostructures through high resolution imaging of texture cross-sections using helium ion microscopy. The images confirm conformal and uniform coverage, even in the narrow trenches between the nanostructures. Moreover, the thickness of the alumina coating is found to be the same for samples with two different nanostructure lengths indicating that precursor supply is sufficient to not limit growth on high surface area structures. Further morphological characterisation is carried out by milling into the nanostructures with a Ne ion beam to reveal the structure in cross-section.