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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Fritze, Holger
Clausthal University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024Acoustic Loss in LiNb1−xTaxO3 at Temperatures up to 900 °C
- 2024Acoustic loss in LiNb1-xTaxO3 at temperatures up to 900 °C
- 2023Analysis of defect mechanisms in nonstoichiometric ceria–zirconia by the microwave cavity perturbation methodcitations
- 2023Chemical expansion of CeO2−δ and Ce0.8Zr0.2O2−δ thin films determined by laser Doppler vibrometry at high temperatures and different oxygen partial pressurescitations
- 2022Assembly and interconnection technology for high-temperature bulk acoustic wave resonatorscitations
- 2022In situ analysis of hydration and ionic conductivity of sulfonated poly(ether ether ketone) thin films using an interdigitated electrode array and a nanobalancecitations
- 2022Impact of electrode conductivity on mass sensitivity of piezoelectric resonators at high temperaturescitations
- 2021Linking the Electrical Conductivity and Non-Stoichiometry of Thin Film Ce1−xZrxO2−δ by a Resonant Nanobalance Approachcitations
- 2021Linking the electrical conductivity and non-stoichiometry of thin film Ce1−xZrxO2−δ by a resonant nanobalance approachcitations
- 2020High-temperature stable piezoelectric transducers using epitaxially grown electrodescitations
- 2020Determination of the Dielectric Properties of Storage Materials for Exhaust Gas Aftertreatment Using the Microwave Cavity Perturbation Methodcitations
- 2019Carbon pair defects in aluminum nitridecitations
- 2019Electromechanical losses in carbon- and oxygen-containing bulk AlN single crystals
- 2018Oxygen transport in epitaxial SrTiO3/SrTi1 − xFexO3 multilayer stackscitations
- 2018Thin-film nano-thermogravimetry applied to praseodymium-cerium oxide films at high temperaturescitations
- 2017Oxygen transport in epitaxial SrTiO3/SrTi1xFexO3 multilayer stackscitations
- 2017Oxygen transport in epitaxial SrTiO3/SrTi1 − xFexO3 multilayer stackscitations
- 2017Oxygen transport in epitaxial SrTiO3/SrTi1-xFexO3 multilayer stackscitations
- 2016Preparation and characterization of c-LiMn2O4 thin films prepared by pulsed laser deposition for lithium-ion batteriescitations
Places of action
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article
Carbon pair defects in aluminum nitride
Abstract
<jats:p>AlN bulk single crystals grown by the physical vapor transport method may be beneficially applied as substrates for deep ultraviolet light emitting devices or as a basic material for piezoelectric resonators operating at high temperatures. Identification of point defects which deteriorate the optical, electrical, and electromechanical properties of AlN crystals for such applications is the subject of the present work. Using Raman spectroscopy, two local vibrational modes (LVMs) were discovered at wave numbers of 1189 cm−1 and 1148 cm−1. By analyzing an AlN crystal intentionally enriched with the carbon isotope 13C, it is unambiguously shown that the two LVMs originate from two different, but in each case carbon-related defects. Furthermore, it is evidenced that the defect underlying the LVM at 1189 cm−1 contains exactly two carbon atoms. The tricarbon defect-related LVM reported earlier in an infrared absorption study is found to be Raman active at 1772 cm−1. The Raman scattering intensity of all three LVMs strongly depends on the photon energy of the exciting light what is interpreted as a resonance Raman effect. This allows linking the identified defects with their contribution to the strong, carbon-related ultraviolet absorption around 4.7 eV and proves that these defects introduce optically and electrically active deep levels in the bandgap of AlN.</jats:p>