| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Mikkelsen, Anders
Lund University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (44/44 displayed)
- 2024Structural and chemical properties of anion exchanged CsPb(Br<sub>(1−x)</sub>Cl<sub> x </sub>)<sub>3</sub> heterostructured perovskite nanowires imaged by nanofocused x-rayscitations
- 2024Diffusion Bonding 321-Grade Stainless Steel : Failure and Multimodal Characterization
- 2024Diffusion Bonding 321-Grade Stainless Steel
- 2024Bismuth-oxide nanoparticles: study in a beam and as deposited
- 2023A 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111)citations
- 2023A 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111)citations
- 2023In situ Imaging of Precipitate Formation in Additively Manufactured Al-Alloys by Scanning X-ray Fluorescencecitations
- 2022Nanometric Moiré Stripes on the Surface of Bi2Se3Topological Insulatorcitations
- 2022In situ imaging of temperature-dependent fast and reversible nanoscale domain switching in a single-crystal perovskitecitations
- 2021Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO 2 RRAM via TiN bottom electrode and interface engineeringcitations
- 2021Inducing ferroelastic domains in single-crystal CsPbBr3 perovskite nanowires using atomic force microscopycitations
- 2021Inducing ferroelastic domains in single-crystal CsPbBr3 perovskite nanowires using atomic force microscopycitations
- 2021Unraveling the Ultrafast Hot Electron Dynamics in Semiconductor Nanowirescitations
- 2021Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineeringcitations
- 2021Surface chemistry and diffusion of trace and alloying elements during in vacuum thermal deoxidation of stainless steelcitations
- 2020In Situ Imaging of Ferroelastic Domain Dynamics in CsPbBr3Perovskite Nanowires by Nanofocused Scanning X-ray Diffractioncitations
- 2020In situ imaging of ferroelastic domain dynamics in CsPbBr3perovskite nanowires by nanofocused scanning X-ray diffractioncitations
- 2019Surface oxide development on aluminum alloy 6063 during heat treatmentcitations
- 2019GaN nanowires as probes for high resolution atomic force and scanning tunneling microscopycitations
- 2018Self-assembled InN quantum dots on side facets of GaN nanowirescitations
- 2018InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer depositioncitations
- 2018Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarizationcitations
- 2017Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowirescitations
- 2015Nanofocused x-ray beams applied for mapping strain in core-shell nanowirescitations
- 2015Nanofocused x-ray beams applied for mapping strain in core-shell nanowirescitations
- 2015Structural Properties of Wurtzite InP-InGaAs Nanowire Core-Shell Heterostructurescitations
- 2015Enhanced Organo-Metal Halide Perovskite Photoluminescence from Nanosized Defect-Free Crystallites and Emitting Sitescitations
- 2015Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogencitations
- 2015Surface morphology of Au-free grown nanowires after native oxide removal.citations
- 2014High repetition rate XUV laser source based on OPCPA for photoemission electron microscopy applications
- 2013Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001)citations
- 2013Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
- 2012One-Dimensional Corrugation of the h-BN Monolayer on Fe(110)citations
- 2012Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substratescitations
- 2012Formation and Structure of Graphene Waves on Fe(110)citations
- 2012Digital in-line holography on amplitude and phase objects prepared with electron beam lithography.citations
- 2011Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopycitations
- 2011Doping profile of InP nanowires directly imaged by photoemission electron microscopycitations
- 2009Lack of surface oxide layers and facile bulk oxide formation on Pd(110)citations
- 2009Photoemission electron microscopy using extreme ultraviolet attosecond pulse trainscitations
- 2006Structural determination of a low-symmetry surface by low-energy electron diffraction and ab initio calculations: Bi(110)citations
- 2005Cross-sectional scanning tunneling microscopy studies of novel III-V semiconductor structurescitations
- 2004Co on Mo(110) studied by scanning tunneling microscopycitations
- 2002Structural properties of LT-GaAs(100) and GaMnAs(100) surfaces studied by scanning tunneling microscopy
Places of action
| Organizations | Location | People |
|---|
article
GaN nanowires as probes for high resolution atomic force and scanning tunneling microscopy
Abstract
GaN nanowires are potential candidates for use in scanning probe microscopy due to their well-defined, reproducible, geometric shapes, their hardness, and their light guiding properties. We have developed and investigated probes for high resolution atomic force microscopy and scanning tunneling microscopy utilizing GaN nanowires as probes. The nanowires are n-doped and the morphology of the nanowires has been tailored for scanning probe microscopy by growing them with a sharp tip for measurements and high thickness for robustness. The individual GaN nanowires were removed from their growth substrate and attached onto commercial atomic force microscopy cantilevers or etched tungsten wires for scanning tunneling microscopy. A standard scanning electron microscope equipped with a nanoprobe, a focused ion beam column and a gas injection system was used to locate, transfer, and attach the nanowires. We evaluated the properties of the GaN probes on different substrates including HOPG, Au, SiO2, InAs, and GaAs. We demonstrate both atomic force microscopy and scanning tunneling microscopy measurements with single atomic layer resolution and evaluate the robustness of the tips by monitoring them before and after scanning. Finally, we explore the use of the tips for scanning tunneling spectroscopy demonstrating that reliable results, which can reveal information on the electronic properties of the surface-tip system, are obtainable. The fundamental properties of these probes, which are demonstrated in this work, show promise for future use of the probes in exploring semiconductor-semiconductor tunneling junctions at the nanoscale as well as for other scanning probe techniques where high resolution is required.