| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bid, Aveek
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2022Observation of hidden electronic phases in 1T-TaS<SUB>2</SUB> through conductance fluctuation spectroscopy
- 2022Observation of Quantum Griffith's singularity and anomalous metal in LaScO<SUB>3</SUB>/SrTiO<SUB>3</SUB> heterostructure
- 2022Temperature dependent cloaking of the Quantum Griffiths Singularity in LaScO$_3$/SrTiO$_3$ heterostructures
- 2019Resistance fluctuation spectroscopy of thin films of 3D topological insulator BiSbTeSe<SUB>1.6</SUB>citations
- 2018Strain-induced continuous transition from Weak localization regime to Strong localization regime in a doped Mott Insulator
- 2017Effect of microstructure on the electronic transport properties of epitaxial CaRuO<SUB>3</SUB> thin filmscitations
- 2016Structural instability and phase co-existence driven non-Gaussian resistance fluctuations in metal nanowires at low temperaturescitations
- 2014Probing a spin-glass state in SrRuO<SUB>3</SUB> thin films through higher-order statistics of resistance fluctuationscitations
- 2005Experimental study of Rayleigh instability in metallic nanowires using resistance fluctuations measurements from 77K to 375Kcitations
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article
Resistance fluctuation spectroscopy of thin films of 3D topological insulator BiSbTeSe<SUB>1.6</SUB>
Abstract
Despite several years of studies, the origin of slow-kinetics of charge-carriers at the surface-states of strong topological insulators remains abstruse. In this article, we report on studies of charge dynamics of thin films of the 3-dimensional strong topological insulator material BiSbTeSe<SUB>1.6</SUB> grown by pulsed laser deposition (PLD). The bulk of the films was insulating, making them suitable for transport studies of topological surface-states. Despite being disordered and granular, the films show definite signatures of the presence of topological surface-states with electronic transport coherence lengths comparable to those of high-quality grown films grown by molecular beam epitaxy (MBE). At high temperatures, the resistance fluctuations in these films were found to be dominated by trapping-detrapping of charge carriers from multiple defect-levels of the bulk. At low temperatures, fluctuations in the resistance of surface-states, arising due to the coupling of surface transport with defect dynamics in bulk, determine the noise. We thus confirm that the measured low-frequency fluctuations in these films, over the entire temperature range of 20 mK-300 K, are determined primarily by bulk defect density. The magnitude of noise was comparable to that measured on bulk-exfoliated films but was slightly higher than that in MBE grown films. Our studies establish PLD as a viable route to develop high-quality topological insulator materials....