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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Bouvier, Pierre
Institut Néel
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (24/24 displayed)
- 2023VO2 under hydrostatic pressure: Isostructural phase transition close to a critical end-pointcitations
- 2019Three-phase metal-insulator transition and structural alternative for a VO2 film epitaxially grown on Al2O3(0001)citations
- 2015High pressure single crystal x-ray and neutron powder diffraction study of the ferroelectric-paraelectric phase transition in PbTiO3citations
- 2014Jahn-Teller, Polarity, and Insulator-to-Metal Transition in BiMnO3 at High Pressurecitations
- 2012X-ray diffraction from stishovite under nonhydrostatic compression to 70 GPa: Strength and elasticity across the tetragonal → orthorhombic transitioncitations
- 2011High-pressure polarized Raman spectra of Gd(2)(MoO(4))(3): phase transitions and amorphizationcitations
- 2010Absence of pressure-induced amorphization in LiKSO4citations
- 2010Pressure-temperature phase diagram of SrTiO3 up to 53 GPacitations
- 2009Single crystal growth of BiMnO3 under high pressure-high temperature
- 2007Comparative study and imaging by PhotoElectroChemical techniques of oxide films thermally grown on zirconium and Zircaloy-4citations
- 2007Structural evolution of (Ca 0.35 Sr 0.65 )TiO 3 perovskite at high pressurescitations
- 2006Hot compaction of nanocrystalline TiO<sub>2</sub> (anatase) ceramics. Mechanisms of densification: Grain size and doping effectscitations
- 2006Raman scattering of the model multiferroic oxide BiFeO 3 : effect of temperature, pressure and stresscitations
- 2006Raman scattering of the model multiferroic oxide BiFeO<sub>3</sub>: effect of temperature, pressure and stresscitations
- 2006SnO 2 /MoO 3 -nanostructure and alcohol detectioncitations
- 2006Raman Imaging and Kelvin Probe Microscopy for the Examination of the Heterogeneity of Doping in Polycrystalline Boron-Doped Diamond Electrodes
- 2006Raman spectroscopy of Cs<SUB>2</SUB>HgBr<SUB>4</SUB> at high-pressure: effect of hydrostaticitycitations
- 2006Raman spectroscopy of Cs 2 HgBr 4 at high-pressure: effect of hydrostaticitycitations
- 2005The high-pressure structural phase transitions of sodium bismuth titanatecitations
- 2004Decomposition of LiGdF 4 scheelite at high pressurescitations
- 2003Quantification of Chemical Pressure in Doped Nanostructured Zirconia Ceramicscitations
- 2002X-ray diffraction study of WO 3 at high pressurecitations
- 2002X-ray diffraction study of WO<sub>3</sub> at high pressurecitations
- 2000Raman study of phases and stresses distributions in oxidation scales of Zirconim alloys: spectroscopic study of pressure and temperature effects on different nanometric Zirconia
Places of action
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article
Three-phase metal-insulator transition and structural alternative for a VO2 film epitaxially grown on Al2O3(0001)
Abstract
We report on the crystallographic phases and their epitaxial relationships observed during the metal-insulator transition (MIT) of a VO2 film deposited on Al2O3(0001). A key feature of this work is to establish two possible in-plane epitaxial relationships for the VO2 film, introducing an “on-axis” and a “diagonal” model. These models have distinctive signatures in reciprocal spaces in the form of multiplet reflections and can, therefore, be easily differentiated by diffraction. They serve as a basis for interpreting the results gained by high-resolution X-ray diffraction, and complemented by Raman spectroscopy, on a 420-nm-thick VO2 film grown by microwave plasma-assisted reactive sputtering on Al2O3(0001). We address its orientation and follow its structure through the MIT. The film is oriented according to the diagonal model and exhibits a MIT involving three phases with different temperature domains of (co)existence. The room- and high-temperature phases are, respectively, identified as the monoclinic M1 and rutile R polymorphs of VO2. Additionally, we observe that when the sample resistivity starts to decrease, the insulating M1 phase turns into an intermediary phase, which then partially transforms into the metallic R phase when the MIT is complete. The intermediary phase is similar to the M2 polymorph of VO2, according to its lattice parameters, Raman signature, and its known proximity with the M1 and R phases in tensile conditions. The mixing of the M2 and R phases is still detected at 110∘C, i.e., far above the MIT; the M2 polymorph is being probably stabilized at the interface between the film and the substrate, where the interfacial strain is higher.