| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Taniguchi, Hiroki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2024Theoretical and data-driven approaches to semiconductors and dielectrics: from prediction to experimentcitations
- 2023Controlling dielectric properties of Nb + X (X = Al, Ga, In) co-doped and Nb-doped rutile-type TiO<sub>2</sub> single crystalscitations
- 2021Size effect of the guest cation on the AlO<sub>4</sub>framework in aluminate sodalite-type oxides<i>M</i><sub>8</sub>[Al<sub>12</sub>O<sub>24</sub>](SO<sub>4</sub>)<sub>2</sub>(<i>M</i> = Sr<sup>2+</sup>and Ca<sup>2+</sup>) in the<i>I</i><ovl>4</ovl>3<i>m</i>phasecitations
- 2020Permittivity boosting in “yellow” (Nb + In) co-doped TiO2citations
- 2019Interplay between quantum paraelectricity and thermoelectricity in the photo-Seebeck effect in a SrTiO3 single crystalcitations
- 2018Systematic tuning of the photo-dielectric effect in Ba(Al1–<i>x</i>Zn<i>x</i>)2O4–δcitations
- 2017Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO2 single crystalscitations
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article
Interplay between quantum paraelectricity and thermoelectricity in the photo-Seebeck effect in a SrTiO3 single crystal
Abstract
<jats:p>We report the electrical conductivity and the Seebeck coefficient of a SrTiO3 single crystal under 405-nm laser illumination from 10 to 30 K. We find that the photoconductivity exponentially increases with decreasing temperature, suggesting a gradual metal-insulator transition. Assuming the carrier mobility reported in the preceding studies, we have evaluated the carrier concentration to be 8×109cm−3 at maximum, which corresponds to 10−7ppm impurities in the case of chemical doping. Such ultralow doping is realized only when the energy of the incident light is slightly lower than the bandgap. In this situation, the incident light penetrates the whole sample with a small probability of electron–hole creation. We find that the observed photo-Seebeck coefficient seriously disagrees with the calculated values from the carrier concentration. In order to remedy this discrepancy, we have proposed a phenomenological model in which the quantum paraelectric behavior of SrTiO3 screens the thermoelectric voltage.</jats:p>