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Coinon, Christophe
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Topics
Publications (9/9 displayed)
- 2022GAP(111)B-SE Surface for TMD epitaxial growth
- 2022In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxycitations
- 2022Colloidal II–VI—Epitaxial III–V heterostructure: A strategy to expand InGaAs spectral responsecitations
- 2021Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wellscitations
- 2020Engineering a Robust Flat Band in III–V Semiconductor Heterostructurescitations
- 2019InAlAs/InGaAs-MSM photodetectors based on optical cavity using metallic mirrors: THz frequency operation, high quantum efficiency and high saturation currentcitations
- 2018Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperaturecitations
- 2017V-shaped InAs/Al<sub>0.5</sub>Ga<sub>0.5</sub>Sb vertical tunnel FET on GaAs (001) substrate with I<sub>ON</sub>=433 µA.µm<sup>-1</sup> at V<sub>DS</sub>= 0.5Vcitations
- 2017V-shaped InAs/Al 0.5 Ga 0.5 Sb vertical tunnel FET on GaAs (001) substrate with I ON =433 µA.µm -1 at V DS = 0.5Vcitations
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article
InAlAs/InGaAs-MSM photodetectors based on optical cavity using metallic mirrors: THz frequency operation, high quantum efficiency and high saturation current
Abstract
<jats:p>We present a metallic mirror-based resonant cavity-enhanced InAlAs/InGaAs metal-semiconductor-metal (InAlAs/InGaAs-MSM) photodetector driven by a 1550 nm wavelength illumination. The device shows a quantum efficiency higher than 30%, a cut-off frequency higher than 100 GHz, and a saturation current density above 40 kA/cm2. As a proof of concept, we demonstrate the generation of 0.25 mW of continuous wave output power at a frequency of 100 GHz via the photomixing of an optical beatnote. This result underlines the potential of InAlAs/InGaAs-MSM for subterahertz and terahertz optoelectronic applications driven by telecom lasers.</jats:p>